Datasheets
IRG4BC30F by:

Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

Part Details for IRG4BC30F by Infineon Technologies AG

Overview of IRG4BC30F by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Electronic Manufacturing

Part Details for IRG4BC30F

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IRG4BC30F Part Data Attributes:

IRG4BC30F Infineon Technologies AG
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IRG4BC30F Infineon Technologies AG Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220AB, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature FAST SPEED
Case Connection COLLECTOR
Collector Current-Max (IC) 31 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 640 ns
Turn-on Time-Nom (ton) 36 ns

Alternate Parts for IRG4BC30F

This table gives cross-reference parts and alternative options found for IRG4BC30F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC30F Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC30F vs IRG4BC30F
IRG4BC30FPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4BC30F vs IRG4BC30FPBF
Part Number Description Manufacturer Compare
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IRG4BC30F vs SGP5N60RUFD
GT25Q101 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, TO-3PL, TO-3PL, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4BC30F vs GT25Q101
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IRG4BC30F vs HGT1S12N60B3S9A
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor IRG4BC30F vs HGTP20N60C3R
IRG4BC20FD-STRL Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier IRG4BC30F vs IRG4BC20FD-STRL
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc IRG4BC30F vs IXGH36N60A3D4
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN Infineon Technologies AG IRG4BC30F vs IRGPS40B120U
SGP5N60RUF Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IRG4BC30F vs SGP5N60RUF
IRG4PC40UD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4BC30F vs IRG4PC40UD
IXSH10N120A Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC30F vs IXSH10N120A

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