Part Details for IRFZ44NSTRRPBF by International Rectifier
Overview of IRFZ44NSTRRPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFZ44NSTRRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFZ44NSTRRPBF-ND
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DigiKey | HEXFET POWER MOSFET Min Qty: 450 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
450 In Stock |
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$0.7900 | Buy Now |
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Rochester Electronics | IRFZ44 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 450 |
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$0.6818 / $0.8021 | Buy Now |
Part Details for IRFZ44NSTRRPBF
IRFZ44NSTRRPBF CAD Models
IRFZ44NSTRRPBF Part Data Attributes:
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IRFZ44NSTRRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFZ44NSTRRPBF
International Rectifier
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | LEAD FREE, PLASTIC, D2PAK-2/3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 49 A | |
Drain-source On Resistance-Max | 0.0175 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFZ44NSTRRPBF
This table gives cross-reference parts and alternative options found for IRFZ44NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ44NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRFZ44NS | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRFZ44NSTRRPBF vs AUIRFZ44NS |
IRFZ44NS/T3 | TRANSISTOR 49 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IRFZ44NSTRRPBF vs IRFZ44NS/T3 |
AUIRFZ44NSTRL | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRFZ44NSTRRPBF vs AUIRFZ44NSTRL |
IRFZ44NSPBF | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | Infineon Technologies AG | IRFZ44NSTRRPBF vs IRFZ44NSPBF |
IRFZ44NS | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | International Rectifier | IRFZ44NSTRRPBF vs IRFZ44NS |
AUIRFZ44NSTRR | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFZ44NSTRRPBF vs AUIRFZ44NSTRR |
IRFZ44NSPBF | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | International Rectifier | IRFZ44NSTRRPBF vs IRFZ44NSPBF |
IRFZ44NSTRLPBF | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 | Infineon Technologies AG | IRFZ44NSTRRPBF vs IRFZ44NSTRLPBF |
AUIRFZ44NSTRL | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | IRFZ44NSTRRPBF vs AUIRFZ44NSTRL |
IRFZ44NSTRRPBF | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-2/3 | Infineon Technologies AG | IRFZ44NSTRRPBF vs IRFZ44NSTRRPBF |