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Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9165
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Newark | Mosfet, N-Ch, 55V, 29A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:29A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.04Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRFZ34NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1786 |
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$1.0900 / $1.6500 | Buy Now |
DISTI #
86AK5342
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Newark | Mosfet, N-Ch, 55V, 29A, To-263 Rohs Compliant: Yes |Infineon IRFZ34NSTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7070 / $0.8580 | Buy Now |
DISTI #
IRFZ34NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 55V 29A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2433 In Stock |
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$0.5978 / $1.5200 | Buy Now |
DISTI #
IRFZ34NSTRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ34NSTRLPBF) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.5312 / $0.6450 | Buy Now |
DISTI #
IRFZ34NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ34NSTRLPBF) RoHS: Compliant Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
IRFZ34NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFZ34NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.5312 / $0.6450 | Buy Now |
DISTI #
942-IRFZ34NSTRLPBF
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Mouser Electronics | MOSFET MOSFT 55V 29A 40mOhm 22.7nC RoHS: Compliant | 7151 |
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$0.5970 / $1.4700 | Buy Now |
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Future Electronics | Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 28800Reel |
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$0.5850 / $0.6400 | Buy Now |
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Future Electronics | Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 3200Reel |
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$0.5850 / $0.6400 | Buy Now |
DISTI #
IRFZ34NSTRLPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 29A, 68W, D2PAK Min Qty: 800 | 0 |
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$0.4450 | RFQ |
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IRFZ34NSTRLPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRFZ34NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 29 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 68 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |