There are no models available for this part yet.
Overview of IRFZ34 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFZ34 by Samsung Semiconductor
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 426 |
|
$2.6400 / $4.8000 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 92 |
|
$1.5000 / $3.0000 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 8 |
|
$1.7250 / $1.8750 | Buy Now |
CAD Models for IRFZ34 by Samsung Semiconductor
Part Data Attributes for IRFZ34 by Samsung Semiconductor
|
|
---|---|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code
|
SFM
|
Package Description
|
TO-220, 3 PIN
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
19 mJ
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
30 A
|
Drain-source On Resistance-Max
|
0.05 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
90 W
|
Power Dissipation-Max (Abs)
|
88 W
|
Pulsed Drain Current-Max (IDM)
|
120 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
133 ns
|
Turn-on Time-Max (ton)
|
131 ns
|
Alternate Parts for IRFZ34
This table gives cross-reference parts and alternative options found for IRFZ34. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFZ34PBF | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Vishay Intertechnologies | IRFZ34 vs IRFZ34PBF |
IRFZ34PBF | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRFZ34 vs IRFZ34PBF |
IRFZ34 | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRFZ34 vs IRFZ34 |
IRFZ34 | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRFZ34 vs IRFZ34 |
IRFZ34PBF | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | International Rectifier | IRFZ34 vs IRFZ34PBF |
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