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Overview of IRFZ24NSTRRPBF by Infineon Technologies AG
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- Number of FFF Equivalents: ( 0 crosses )
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- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRFZ24NSTRRPBF by Infineon Technologies AG
Part Data Attributes for IRFZ24NSTRRPBF by Infineon Technologies AG
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Rohs Code
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Yes
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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D2PAK-3/2
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Reach Compliance Code
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not_compliant
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
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71 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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55 V
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Drain Current-Max (ID)
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17 A
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Drain-source On Resistance-Max
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0.07 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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65 pF
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JESD-30 Code
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R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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3.8 W
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Power Dissipation-Max (Abs)
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45 W
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Pulsed Drain Current-Max (IDM)
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68 A
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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30
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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