There are no models available for this part yet.
Overview of IRFZ10 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 3 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRFZ10 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 150 |
|
RFQ | ||||
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 120 |
|
$1.2500 / $2.5000 | Buy Now |
CAD Models for IRFZ10 by Vishay Intertechnologies
Part Data Attributes for IRFZ10 by Vishay Intertechnologies
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Part Package Code
|
TO-220AB
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Vishay
|
Avalanche Energy Rating (Eas)
|
47 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
10 A
|
Drain-source On Resistance-Max
|
0.2 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
20 W
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFZ10
This table gives cross-reference parts and alternative options found for IRFZ10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFZ10 | Power Field-Effect Transistor, 10A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFZ10 vs IRFZ10 |
IRFZ10PBF | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRFZ10 vs IRFZ10PBF |
IRFZ10PBF | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRFZ10 vs IRFZ10PBF |
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