There are no models available for this part yet.
Overview of IRFY9130MEB by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 2 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRFY9130MEB by Infineon Technologies AG
Part Data Attributes for IRFY9130MEB by Infineon Technologies AG
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|
|
|---|---|
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Rohs Code
|
No
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|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
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|
Reach Compliance Code
|
unknown
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|
ECCN Code
|
EAR99
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Case Connection
|
ISOLATED
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
|
9.3 A
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Drain-source On Resistance-Max
|
0.36 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-257AB
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JESD-30 Code
|
S-MSFM-P3
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Number of Elements
|
1
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Number of Terminals
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3
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Operating Mode
|
ENHANCEMENT MODE
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Package Body Material
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METAL
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
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Polarity/Channel Type
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P-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
37 A
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Qualification Status
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Not Qualified
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Reference Standard
|
CECC
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Surface Mount
|
NO
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Terminal Form
|
PIN/PEG
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Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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Alternate Parts for IRFY9130MEB
This table gives cross-reference parts and alternative options found for IRFY9130MEB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9130MEB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFY9130MEBPBF | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130MEB vs IRFY9130MEBPBF |
| IRFY9130MEB | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB | International Rectifier | IRFY9130MEB vs IRFY9130MEB |