Transistors
IRFY430M
Description: Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

Overview of IRFY430M by International Rectifier

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 1 cross )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 2 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for IRFY430M by International Rectifier
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Part Data Attributes for IRFY430M by International Rectifier

IRFY430M
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-257AA
Package Description
FLANGE MOUNT, S-XSFM-P3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
280 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
4.5 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-257AA
JESD-30 Code
S-XSFM-P3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
45 W
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
18 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
65 ns
Want to compare parts?
  1. IRFY430M
    International Rectifier
    Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
    VS

Alternate Parts for IRFY430M

This table gives cross-reference parts and alternative options found for IRFY430M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY430M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFY430M Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY430M vs IRFY430M
Part Number Description Manufacturer Compare
IRFY430M 3.7A, 500V, 1.84ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited IRFY430M vs IRFY430M
IRFY430M Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFY430M vs IRFY430M

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