Part Details for IRFW740BTM by Fairchild Semiconductor Corporation
Overview of IRFW740BTM by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFW740BTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFW740BTM-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 807 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
70400 In Stock |
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$0.3700 | Buy Now |
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Rochester Electronics | 10A, 400V, 0.54ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 70400 |
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$0.3039 / $0.3575 | Buy Now |
Part Details for IRFW740BTM
IRFW740BTM CAD Models
IRFW740BTM Part Data Attributes
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IRFW740BTM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
IRFW740BTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 134 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFW740BTM
This table gives cross-reference parts and alternative options found for IRFW740BTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFW740BTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UF740G-TQ2-R | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | IRFW740BTM vs UF740G-TQ2-R |
| FQB11N40CTM | Power MOSFET, N-Channel, QFET®, 400 V, 10.5 A, 530 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL | onsemi | IRFW740BTM vs FQB11N40CTM |
| FQB11N40CTM | 10.5A, 400V, 0.53ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, D2PAK-3 | Rochester Electronics LLC | IRFW740BTM vs FQB11N40CTM |
| FQB11N40C | Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs FQB11N40C |
| IRFW740BTM | 10A, 400V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | IRFW740BTM vs IRFW740BTM |
| UF740L-TQ2-T | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | IRFW740BTM vs UF740L-TQ2-T |
| UF740G-TQ2-T | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | IRFW740BTM vs UF740G-TQ2-T |
| IRFW740B | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs IRFW740B |
| IRFW740BTM_NL | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs IRFW740BTM_NL |
| FQB11N40CTM | Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Fairchild Semiconductor Corporation | IRFW740BTM vs FQB11N40CTM |