Part Details for IRFU1N60APBF by Vishay Intertechnologies
Overview of IRFU1N60APBF by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFU1N60APBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56AJ9905
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Newark | Mosfet, N-Ch, 600V, 1.4A, To-251 Rohs Compliant: Yes |Vishay IRFU1N60APBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1070 |
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$0.8760 / $1.5700 | Buy Now |
DISTI #
IRFU1N60APBF
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Avnet Americas | MOSFET N-CHANNEL 600V - Tape and Reel (Alt: IRFU1N60APBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.5524 | Buy Now |
DISTI #
844-IRFU1N60APBF
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Mouser Electronics | MOSFETs TO251 600V 1.4A N-CH MOSFET RoHS: Compliant | 240 |
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$0.6430 / $1.3000 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.5930 | Buy Now |
DISTI #
IRFU1N60APBF
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TTI | MOSFETs TO251 600V 1.4A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 75 Container: Tube | Americas - 0 |
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$0.5350 / $0.5570 | Buy Now |
DISTI #
IRFU1N60APBF
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TME | Transistor: N-MOSFET, unipolar, 600V, 1.4A, Idm: 5.6A, 36W Min Qty: 1 | 0 |
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$0.5150 / $1.4470 | RFQ |
DISTI #
IRFU1N60APBF
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EBV Elektronik | Trans MOSFET N-CH 600V 1.4A 3-Pin(3+Tab) IPAK (Alt: IRFU1N60APBF) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRFU1N60APBF
IRFU1N60APBF CAD Models
IRFU1N60APBF Part Data Attributes
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IRFU1N60APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFU1N60APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 93 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 1.4 A | |
Drain-source On Resistance-Max | 7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 36 W | |
Pulsed Drain Current-Max (IDM) | 5.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFU1N60APBF
This table gives cross-reference parts and alternative options found for IRFU1N60APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU1N60APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFU1N60A | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Vishay Siliconix | IRFU1N60APBF vs IRFU1N60A |
IRFU1N60APBF | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 | Vishay Siliconix | IRFU1N60APBF vs IRFU1N60APBF |
IRFU1N60A | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | Vishay Intertechnologies | IRFU1N60APBF vs IRFU1N60A |
IRFU1N60APBF | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 | International Rectifier | IRFU1N60APBF vs IRFU1N60APBF |