Datasheets
IRFU1N60APBF by:

Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,

Part Details for IRFU1N60APBF by Vishay Intertechnologies

Overview of IRFU1N60APBF by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFU1N60APBF

Part # Distributor Description Stock Price Buy
DISTI # 56AJ9905
Newark Mosfet, N-Ch, 600V, 1.4A, To-251 Rohs Compliant: Yes |Vishay IRFU1N60APBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1070
  • 1 $1.5700
  • 10 $1.2800
  • 25 $1.2000
  • 50 $1.1100
  • 100 $1.0200
  • 500 $0.8760
$0.8760 / $1.5700 Buy Now
DISTI # IRFU1N60APBF
Avnet Americas MOSFET N-CHANNEL 600V - Tape and Reel (Alt: IRFU1N60APBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5524
$0.5524 Buy Now
DISTI # 844-IRFU1N60APBF
Mouser Electronics MOSFETs TO251 600V 1.4A N-CH MOSFET RoHS: Compliant 240
  • 1 $1.3000
  • 10 $1.0700
  • 100 $0.8710
  • 500 $0.7630
  • 1,000 $0.6430
$0.6430 / $1.3000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 0
  • 3,000 $0.5930
$0.5930 Buy Now
DISTI # IRFU1N60APBF
TTI MOSFETs TO251 600V 1.4A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 75 Container: Tube Americas - 0
  • 3,000 $0.5570
  • 5,025 $0.5450
  • 10,050 $0.5350
$0.5350 / $0.5570 Buy Now
DISTI # IRFU1N60APBF
TME Transistor: N-MOSFET, unipolar, 600V, 1.4A, Idm: 5.6A, 36W Min Qty: 1 0
  • 1 $1.4470
  • 10 $1.0720
  • 75 $0.8780
  • 150 $0.8100
  • 375 $0.7290
  • 525 $0.7010
  • 750 $0.6740
  • 1,050 $0.6500
  • 2,025 $0.6050
  • 10,050 $0.5150
$0.5150 / $1.4470 RFQ
DISTI # IRFU1N60APBF
EBV Elektronik Trans MOSFET N-CH 600V 1.4A 3-Pin(3+Tab) IPAK (Alt: IRFU1N60APBF) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFU1N60APBF

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IRFU1N60APBF Part Data Attributes

IRFU1N60APBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFU1N60APBF Vishay Intertechnologies Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 93 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Pulsed Drain Current-Max (IDM) 5.6 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFU1N60APBF

This table gives cross-reference parts and alternative options found for IRFU1N60APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU1N60APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFU1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Vishay Siliconix IRFU1N60APBF vs IRFU1N60A
IRFU1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 Vishay Siliconix IRFU1N60APBF vs IRFU1N60APBF
IRFU1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 Vishay Intertechnologies IRFU1N60APBF vs IRFU1N60A
IRFU1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 International Rectifier IRFU1N60APBF vs IRFU1N60APBF
Part Number Description Manufacturer Compare
IRFU1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 International Rectifier IRFU1N60APBF vs IRFU1N60A
IRFU1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 Vishay Siliconix IRFU1N60APBF vs IRFU1N60APBF
IRFU1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 Vishay Intertechnologies IRFU1N60APBF vs IRFU1N60A
IRFU1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3 International Rectifier IRFU1N60APBF vs IRFU1N60APBF

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