Datasheets
IRFSL4610PBF by:

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

Part Details for IRFSL4610PBF by International Rectifier

Overview of IRFSL4610PBF by International Rectifier

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Applications Energy and Power Systems Renewable Energy

Part Details for IRFSL4610PBF

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IRFSL4610PBF Part Data Attributes

IRFSL4610PBF International Rectifier
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IRFSL4610PBF International Rectifier Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 370 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 73 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Pulsed Drain Current-Max (IDM) 290 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFSL4610PBF

This table gives cross-reference parts and alternative options found for IRFSL4610PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFSL4610PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFSL4610TRR Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG IRFSL4610PBF vs IRFSL4610TRR
IRFSL4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRFSL4610PBF vs IRFSL4610TRL
IRFSL4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG IRFSL4610PBF vs IRFSL4610TRL
Part Number Description Manufacturer Compare
IRF8010PBF Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRFSL4610PBF vs IRF8010PBF
IRF8010 Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRFSL4610PBF vs IRF8010
IRF8010PBF Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFSL4610PBF vs IRF8010PBF
IRFSL4610TRR Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRFSL4610PBF vs IRFSL4610TRR
IRF8010LPBF Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRFSL4610PBF vs IRF8010LPBF
IRF8010 Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRFSL4610PBF vs IRF8010
IRF8010HR Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRFSL4610PBF vs IRF8010HR
IRFSL4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRFSL4610PBF vs IRFSL4610TRL
IXFX80N10Q Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Littelfuse Inc IRFSL4610PBF vs IXFX80N10Q
IRFSL4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG IRFSL4610PBF vs IRFSL4610TRL

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