IRFS9N60APBF
Description: Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Overview of IRFS9N60APBF by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFS9N60APBF by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 56AJ9904
Newark Mosfet, N-Ch, 600V, 9.2A, To-263 Rohs Compliant: Yes |Vishay IRFS9N60APBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 306
  • 1 $3.2900
  • 10 $2.8300
  • 25 $2.2500
  • 50 $2.1300
  • 100 $2.0100
  • 500 $1.8300
$1.8300 / $3.2900 Buy Now
DISTI # 63J7040
Newark N Channel Mosfet, 600V, 9.2A D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:9.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFS9N60APBF RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $1.7000
$1.7000 Buy Now
DISTI # 79AH3185
Newark Mosfet N-Channel 600V Rohs Compliant: No |Vishay IRFS9N60APBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.5400
$1.5400 Buy Now
DISTI # IRFS9N60APBF
Avnet Americas MOSFET N-CHANNEL 600V - Tape and Reel (Alt: IRFS9N60APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel 1000
  • 1,000 $1.5400
$1.5400 Buy Now
DISTI # 844-IRFS9N60APBF
Mouser Electronics MOSFETs TO263 600V 9.2A N-CH MOSFET RoHS: Compliant 1688
  • 1 $3.1000
  • 10 $2.8400
  • 25 $1.9600
  • 100 $1.7100
  • 250 $1.6300
  • 1,000 $1.6200
  • 5,000 $1.5700
$1.5700 / $3.1000 Buy Now
Future Electronics Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 37400
Tube
  • 50 $1.1700
  • 200 $1.1400
  • 750 $1.1100
  • 1,250 $1.1000
  • 2,500 $1.0600
$1.0600 / $1.1700 Buy Now
Future Electronics Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 4840
Tube
  • 1 $1.2400
  • 40 $1.2000
  • 150 $1.1700
  • 400 $1.1400
  • 1,500 $1.0800
$1.0800 / $1.2400 Buy Now
Future Electronics Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 1 $1.2400
  • 40 $1.2000
  • 150 $1.1700
  • 400 $1.1400
  • 1,500 $1.0800
$1.0800 / $1.2400 Buy Now
Future Electronics Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.2000
  • 200 $1.1700
  • 750 $1.1300
  • 1,250 $1.1200
  • 2,500 $1.0800
$1.0800 / $1.2000 Buy Now
DISTI # 76480935
Verical Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK Min Qty: 6 Package Multiple: 1 Date Code: 2337 Americas - 1098
  • 6 $2.3667
  • 10 $2.0913
  • 25 $1.7470
  • 50 $1.7021
  • 100 $1.3515
  • 500 $1.0924
$1.0924 / $2.3667 Buy Now
DISTI # 71799898
Verical Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK Min Qty: 5 Package Multiple: 1 Date Code: 2337 Americas - 933
  • 5 $2.9702
  • 10 $2.5142
  • 25 $1.9859
  • 50 $1.9278
  • 100 $1.4433
  • 500 $1.1161
$1.1161 / $2.9702 Buy Now
DISTI # 69266969
Verical Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK Min Qty: 13 Package Multiple: 1 Date Code: 2229 Americas - 17
  • 13 $2.5625
$2.5625 Buy Now
DISTI # IRFS9N60APBF
TTI MOSFETs TO263 600V 9.2A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 19250
In Stock
  • 50 $1.2700
  • 100 $1.2400
  • 150 $1.2000
  • 250 $1.1700
  • 500 $1.1500
  • 750 $1.1100
  • 1,000 $1.0900
$1.0900 / $1.2700 Buy Now
DISTI # IRFS9N60APBF
TME Transistor: N-MOSFET, unipolar, 600V, 5.8A, 170W, D2PAK,TO263 Min Qty: 1 158
  • 1 $2.2800
  • 3 $2.0400
  • 10 $1.8100
  • 50 $1.6300
  • 250 $1.5200
$1.5200 / $2.2800 Buy Now
ComSIT USA Power MOSFET Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 200
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # IRFS9N60APBF
Avnet Asia MOSFET N-CHANNEL 600V (Alt: IRFS9N60APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 14 Weeks, 0 Days 0
RFQ
DISTI # C1S803605981756
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 933
  • 1 $2.9702
  • 10 $2.5142
  • 25 $1.9859
  • 50 $1.9278
  • 100 $1.6200
$1.6200 / $2.9702 Buy Now
DISTI # C1S803600444524
Chip1Stop Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK RoHS: Compliant pbFree: Yes 102
  • 1 $2.9500
  • 10 $2.0400
  • 50 $1.7100
  • 100 $1.2300
$1.2300 / $2.9500 Buy Now
DISTI # C1S803601450568
Chip1Stop Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK RoHS: Compliant pbFree: Yes Container: Tube 17
  • 1 $2.6900
  • 10 $2.0500
$2.0500 / $2.6900 Buy Now
DISTI # IRFS9N60APBF
EBV Elektronik Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK (Alt: IRFS9N60APBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 13300
Buy Now
LCSC 600V 9.2A 750m10V5.5A 170W 4V250uA 1 N-Channel TO-263-2 MOSFETs ROHS 1
  • 1 $3.5320
  • 10 $3.4629
  • 30 $3.4190
  • 100 $3.3734
$3.3734 / $3.5320 Buy Now

CAD Models for IRFS9N60APBF by Vishay Intertechnologies
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Part Data Attributes for IRFS9N60APBF by Vishay Intertechnologies

IRFS9N60APBF
Vishay Intertechnologies
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
290 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
9.2 A
Drain-source On Resistance-Max
0.75 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
170 W
Pulsed Drain Current-Max (IDM)
37 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFS9N60APBF
    Vishay Intertechnologies
    Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
    VS

Alternate Parts for IRFS9N60APBF

This table gives cross-reference parts and alternative options found for IRFS9N60APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS9N60APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFS9N60ATRLPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS9N60APBF vs IRFS9N60ATRLPBF
IRFS9N60A Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFS9N60APBF vs IRFS9N60A
SIHFS9N60A-GE3 TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRFS9N60APBF vs SIHFS9N60A-GE3
IRFS9N60A Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFS9N60APBF vs IRFS9N60A
IRFS9N60A Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRFS9N60APBF vs IRFS9N60A
IRFS9N60ATRRPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFS9N60APBF vs IRFS9N60ATRRPBF
IRFS9N60APBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRFS9N60APBF vs IRFS9N60APBF
IRFS9N60ATRLPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFS9N60APBF vs IRFS9N60ATRLPBF
IRFS9N60ATRRPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS9N60APBF vs IRFS9N60ATRRPBF
IRFS9N60ATRLPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRFS9N60APBF vs IRFS9N60ATRLPBF
Part Number Description Manufacturer Compare
IRFS9N60ATRLPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Vishay Intertechnologies IRFS9N60APBF vs IRFS9N60ATRLPBF
IRFS9N60ATRRPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS9N60APBF vs IRFS9N60ATRRPBF
IRFS9N60A Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFS9N60APBF vs IRFS9N60A
IRFS9N60A Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 Vishay Siliconix IRFS9N60APBF vs IRFS9N60A
IRFS9N60ATRR Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFS9N60APBF vs IRFS9N60ATRR
IRFS9N60ATRLPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFS9N60APBF vs IRFS9N60ATRLPBF
IRFS9N60APBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRFS9N60APBF vs IRFS9N60APBF
SIHFS9N60A-GE3 TRANSISTOR 9.2 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix IRFS9N60APBF vs SIHFS9N60A-GE3
IRFS9N60A Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFS9N60APBF vs IRFS9N60A
IRFS9N60ATRLPBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRFS9N60APBF vs IRFS9N60ATRLPBF

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