Datasheets
IRFR9010TR by:

Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for IRFR9010TR by International Rectifier

Overview of IRFR9010TR by International Rectifier

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Part Details for IRFR9010TR

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IRFR9010TR Part Data Attributes

IRFR9010TR International Rectifier
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IRFR9010TR International Rectifier Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 5.3 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFR9010TR

This table gives cross-reference parts and alternative options found for IRFR9010TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9010TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR9010TRLPBF Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9010TR vs IRFR9010TRLPBF
IRFR9010 Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR9010TR vs IRFR9010
IRFR9010TRPBF TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9010TR vs IRFR9010TRPBF
IRFR9010PBF Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9010TR vs IRFR9010PBF
IRFR9010PBF TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9010TR vs IRFR9010PBF
IRFR9010-T1 Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR9010TR vs IRFR9010-T1
IRFR9010TRLPBF Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR9010TR vs IRFR9010TRLPBF
IRFR9010TRR Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9010TR vs IRFR9010TRR
IRFR9010 Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR9010TR vs IRFR9010
Part Number Description Manufacturer Compare
IRFR9010 Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR9010TR vs IRFR9010
IRFR9010-T1 Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR9010TR vs IRFR9010-T1
IRFR9010PBF TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9010TR vs IRFR9010PBF
IRFR9010TRPBF Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9010TR vs IRFR9010TRPBF
IRFR9010 Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR9010TR vs IRFR9010
IRFR9010TRR Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9010TR vs IRFR9010TRR
IRFR9010TRLPBF Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9010TR vs IRFR9010TRLPBF
IRFR9010TRPBF TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9010TR vs IRFR9010TRPBF
IRFR9010TRLPBF Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR9010TR vs IRFR9010TRLPBF
IRFR9010PBF Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR9010TR vs IRFR9010PBF

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