Part Details for IRFR210TRPBF by Vishay Intertechnologies
Overview of IRFR210TRPBF by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR210TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56AJ9895
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Newark | Mosfet, N-Ch, 200V, 2.6A, To-252 Rohs Compliant: Yes |Vishay IRFR210TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 178 |
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$0.6640 / $0.9640 | Buy Now |
DISTI #
63J6925
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Newark | N Channel Mosfet, 200V, 2.6A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:2.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR210TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5320 / $0.6280 | Buy Now |
DISTI #
05W6855
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Newark | Mosfet, N Ch, 200V, 2.6A, To-252-3, Transistor Polarity:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:2.6A, On Resistance Rds(On):1.5Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay IRFR210TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7420 | Buy Now |
DISTI #
844-IRFR210TRPBF
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Mouser Electronics | MOSFET 200V Vds, 20V Vgs DPAK (TO-252) RoHS: Compliant | 19468 |
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$0.4710 / $0.9000 | Buy Now |
DISTI #
V72:2272_09218297
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Arrow Electronics | Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2213 Container: Cut Strips | Americas - 350 |
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$0.3769 / $0.5834 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.3700 / $0.3950 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.3700 / $0.3950 | Buy Now |
DISTI #
61700360
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Verical | Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK T/R Min Qty: 16 Package Multiple: 1 Date Code: 2213 | Americas - 350 |
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$0.3769 / $0.5172 | Buy Now |
DISTI #
IRFR210TRPBF
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TTI | MOSFET 200V Vds, 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel | Americas - 0 |
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$0.4110 / $0.4360 | Buy Now |
DISTI #
IRFR210TRPBF
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TME | Transistor: N-MOSFET, unipolar, 200V, 2.6A, Idm: 10A, 25W Min Qty: 1 | 0 |
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$0.4290 / $0.9680 | RFQ |
Part Details for IRFR210TRPBF
IRFR210TRPBF CAD Models
IRFR210TRPBF Part Data Attributes
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IRFR210TRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR210TRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-252AA | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 95 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 15 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR210TRPBF
This table gives cross-reference parts and alternative options found for IRFR210TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR210TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR210 | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR210TRPBF vs IRFR210 |
IRFR210-T1 | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFR210TRPBF vs IRFR210-T1 |
IRFR210TRLPBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR210TRPBF vs IRFR210TRLPBF |
SIHFR210TRL-GE3 | TRANSISTOR 2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR210TRPBF vs SIHFR210TRL-GE3 |
IRFR210 | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR210TRPBF vs IRFR210 |
IRFR210 | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR210TRPBF vs IRFR210 |
IRFR210TRPBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR210TRPBF vs IRFR210TRPBF |
IRFR210 | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | IRFR210TRPBF vs IRFR210 |
IRFR210PBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR210TRPBF vs IRFR210PBF |
IRFR210PBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR210TRPBF vs IRFR210PBF |