Part Details for IRFR120ATM by Rochester Electronics LLC
Overview of IRFR120ATM by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFR120ATM
IRFR120ATM CAD Models
IRFR120ATM Part Data Attributes:
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IRFR120ATM
Rochester Electronics LLC
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Datasheet
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IRFR120ATM
Rochester Electronics LLC
8.4A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 141 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8.4 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR120ATM
This table gives cross-reference parts and alternative options found for IRFR120ATM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120ATM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR120ATF | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | IRFR120ATM vs IRFR120ATF |
| IRFR120ATF | 8.4A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | IRFR120ATM vs IRFR120ATF |
| IRFR120A | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR120ATM vs IRFR120A |