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Transistors Power Field-Effect Transistors IRFPC60

IRFPC60
Description: Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Overview of IRFPC60 by International Rectifier

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Price & Stock for IRFPC60 by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-247AC 89
  • 1 $13.5000
  • 31 $5.8500
  • 86 $5.4000
$5.4000 / $13.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-247AC 63
  • 1 $13.5000
  • 9 $9.0000
  • 29 $8.3250
$8.3250 / $13.5000 Buy Now

CAD Models for IRFPC60 by International Rectifier
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Part Data Attributes for IRFPC60 by International Rectifier
Parametric Data

IRFPC60
International Rectifier
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
1000 mJ
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
16 A
Drain-source On Resistance-Max
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AC
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
280 W
Power Dissipation-Max (Abs)
280 W
Pulsed Drain Current-Max (IDM)
64 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFPC60
    International Rectifier
    Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    VS

Alternate Parts for IRFPC60

This table gives cross-reference parts and alternative options found for IRFPC60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPC60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MTW8N60E 8A, 600V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE Motorola Mobility LLC IRFPC60 vs MTW8N60E
IRFPC60LC Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFPC60 vs IRFPC60LC
IRFPC60PBF Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFPC60 vs IRFPC60PBF
IRFPC60PBF Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFPC60 vs IRFPC60PBF
MTW8N60E 8A, 600V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN onsemi IRFPC60 vs MTW8N60E
SSH17N55 Power Field-Effect Transistor, 17A I(D), 550V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFPC60 vs SSH17N55
Part Number Description Manufacturer Compare
IRFPC60LC Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFPC60 vs IRFPC60LC
MTW8N60E 8A, 600V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN onsemi IRFPC60 vs MTW8N60E
MTW8N60E 8A, 600V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE Motorola Mobility LLC IRFPC60 vs MTW8N60E
IRFPC60PBF Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFPC60 vs IRFPC60PBF
IRFPC60PBF Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier IRFPC60 vs IRFPC60PBF
IRFPC60 Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFPC60 vs IRFPC60
2SK3355-AZ Power Field-Effect Transistor, 83A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN NEC Electronics Group IRFPC60 vs 2SK3355-AZ
2SK3355 Power Field-Effect Transistor, 83A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN NEC Electronics Group IRFPC60 vs 2SK3355
SSH17N55 Power Field-Effect Transistor, 17A I(D), 550V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFPC60 vs SSH17N55
FS4KM-12 Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric IRFPC60 vs FS4KM-12

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