Part Details for IRFL4315PBF by Infineon Technologies AG
Results Overview of IRFL4315PBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRFL4315PBF Information
IRFL4315PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFL4315PBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFL4315PBF-ND
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DigiKey | MOSFET N-CH 150V 2.6A SOT223 Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Win Source Electronics | HEXFET Power MOSFET | MOSFET N-CH 150V 2.6A SOT223 | 105450 |
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$0.5126 / $0.6620 | Buy Now |
Part Details for IRFL4315PBF
IRFL4315PBF CAD Models
IRFL4315PBF Part Data Attributes
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IRFL4315PBF
Infineon Technologies AG
Buy Now
Datasheet
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IRFL4315PBF
Infineon Technologies AG
Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-223, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 38 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 0.185 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.8 W | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFL4315PBF
This table gives cross-reference parts and alternative options found for IRFL4315PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL4315PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFL4315 | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | IRFL4315PBF vs IRFL4315 |
IRFL4315TRPBF | Infineon Technologies AG | $0.4375 | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | IRFL4315PBF vs IRFL4315TRPBF |
IRFL4315TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | IRFL4315PBF vs IRFL4315TRPBF |
IRFL4315PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | IRFL4315PBF vs IRFL4315PBF |