Datasheets
IRFL4315PBF by:
Infineon Technologies AG
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4

Part Details for IRFL4315PBF by Infineon Technologies AG

Results Overview of IRFL4315PBF by Infineon Technologies AG

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IRFL4315PBF Information

IRFL4315PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFL4315PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFL4315PBF-ND
DigiKey MOSFET N-CH 150V 2.6A SOT223 Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
Win Source Electronics HEXFET Power MOSFET | MOSFET N-CH 150V 2.6A SOT223 105450
  • 80 $0.6620
  • 165 $0.6193
  • 255 $0.5980
  • 365 $0.5553
  • 470 $0.5339
  • 590 $0.5126
$0.5126 / $0.6620 Buy Now

Part Details for IRFL4315PBF

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IRFL4315PBF Part Data Attributes

IRFL4315PBF Infineon Technologies AG
Buy Now Datasheet
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IRFL4315PBF Infineon Technologies AG Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOT-223, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 38 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 0.185 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.8 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL4315PBF

This table gives cross-reference parts and alternative options found for IRFL4315PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL4315PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFL4315 International Rectifier Check for Price Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN IRFL4315PBF vs IRFL4315
IRFL4315TRPBF Infineon Technologies AG $0.4375 Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 IRFL4315PBF vs IRFL4315TRPBF
IRFL4315TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 IRFL4315PBF vs IRFL4315TRPBF
IRFL4315PBF International Rectifier Check for Price Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 IRFL4315PBF vs IRFL4315PBF

IRFL4315PBF Related Parts

IRFL4315PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFL4315PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.

  • The recommended gate drive voltage for the IRFL4315PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRFL4315PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.

  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the device.