Part Details for IRFIBE30GPBF by Vishay Intertechnologies
Overview of IRFIBE30GPBF by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFIBE30GPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97K1998
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Newark | Mosfet Transistor, N Channel, 2.1 A, 800 V, 3 Ohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRFIBE30GPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.4800 / $3.9600 | Buy Now |
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DISTI #
844-IRFIBE30GPBF
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Mouser Electronics | MOSFET 800V N-CH HEXFET RoHS: Compliant | 1007 |
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$1.6500 / $2.3300 | Buy Now |
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Future Electronics | Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 900Tube |
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$1.2200 / $1.3900 | Buy Now |
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Future Electronics | Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.2400 / $1.4200 | Buy Now |
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DISTI #
IRFIBE30GPBF
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TTI | MOSFET 800V N-CH HEXFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 400 In Stock |
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$1.2400 / $1.3300 | Buy Now |
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DISTI #
IRFIBE30GPBF
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TME | Transistor: N-MOSFET, unipolar, 800V, 1.4A, 35W, TO220FP Min Qty: 1 | 45 |
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$1.0600 / $1.5900 | Buy Now |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 2500 |
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RFQ | |
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DISTI #
IRFIBE30GPBF
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EBV Elektronik | Trans MOSFET N-CH 800V 2.1A 3-Pin(3+Tab) TO-220 Full-Pak (Alt: IRFIBE30GPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days | EBV - 700 |
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Buy Now |
Part Details for IRFIBE30GPBF
IRFIBE30GPBF CAD Models
IRFIBE30GPBF Part Data Attributes:
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IRFIBE30GPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFIBE30GPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 2.1 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 8.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFIBE30GPBF
This table gives cross-reference parts and alternative options found for IRFIBE30GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFIBE30GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFIBE30G | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | IRFIBE30GPBF vs IRFIBE30G |
| IRFIBE30G | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | International Rectifier | IRFIBE30GPBF vs IRFIBE30G |
| IRFIBE30GPBF | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 | International Rectifier | IRFIBE30GPBF vs IRFIBE30GPBF |