Datasheets
IRFI9530GPBF by:

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3

Part Details for IRFI9530GPBF by Vishay Siliconix

Overview of IRFI9530GPBF by Vishay Siliconix

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Price & Stock for IRFI9530GPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFI9530GPBF-ND
DigiKey MOSFET P-CH 100V 7.7A TO220-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 3542
In Stock
  • 1 $2.4100
  • 50 $1.1996
  • 100 $1.0819
  • 500 $0.9265
$0.9265 / $2.4100 Buy Now
ComSIT USA Power MOSFET Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Stock EU - 49
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRFI9530GPBF

IRFI9530GPBF CAD Models

IRFI9530GPBF Part Data Attributes

IRFI9530GPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFI9530GPBF Vishay Siliconix Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 380 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFI9530GPBF

This table gives cross-reference parts and alternative options found for IRFI9530GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFI9530GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFI9530GPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULL PACK-3 Vishay Intertechnologies IRFI9530GPBF vs IRFI9530GPBF
IRFI9530G Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies IRFI9530GPBF vs IRFI9530G
IRFI9530G Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULLPAK-3 Vishay Siliconix IRFI9530GPBF vs IRFI9530G
IRFI9530G Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI9530GPBF vs IRFI9530G
Part Number Description Manufacturer Compare
IRFI9530G Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies IRFI9530GPBF vs IRFI9530G
IRFI9530G Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI9530GPBF vs IRFI9530G
IRFI9530G Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULLPAK-3 Vishay Siliconix IRFI9530GPBF vs IRFI9530G

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