Datasheets
IRFI634GPBF by:

Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3

Part Details for IRFI634GPBF by Vishay Siliconix

Overview of IRFI634GPBF by Vishay Siliconix

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFI634GPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFI634GPBF-ND
DigiKey MOSFET N-CH 250V 5.6A TO220-3 Min Qty: 1 Lead time: 14 Weeks Container: Tube 836
In Stock
  • 1 $3.0500
  • 50 $1.5184
  • 100 $1.3697
  • 500 $1.1085
$1.1085 / $3.0500 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 4000
  • 1,000 $0.9429
  • 4,000 $0.8800
$0.8800 / $0.9429 Buy Now

Part Details for IRFI634GPBF

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IRFI634GPBF Part Data Attributes

IRFI634GPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFI634GPBF Vishay Siliconix Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 300 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFI634GPBF

This table gives cross-reference parts and alternative options found for IRFI634GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFI634GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFI634GPBF Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier IRFI634GPBF vs IRFI634GPBF
IRFI634G Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI634GPBF vs IRFI634G
SIHFI634G TRANSISTOR 5.6 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, FULLPAK-3, FET General Purpose Power Vishay Siliconix IRFI634GPBF vs SIHFI634G
IRFI634G Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULLPAK-3 Vishay Siliconix IRFI634GPBF vs IRFI634G
IRFI634G Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies IRFI634GPBF vs IRFI634G
Part Number Description Manufacturer Compare
IRFI634GPBF Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3 Vishay Intertechnologies IRFI634GPBF vs IRFI634GPBF
IRFI634G Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI634GPBF vs IRFI634G
IRFI634G Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies IRFI634GPBF vs IRFI634G
IRFI634GPBF Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier IRFI634GPBF vs IRFI634GPBF
SIHFI634G TRANSISTOR 5.6 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, FULLPAK-3, FET General Purpose Power Vishay Siliconix IRFI634GPBF vs SIHFI634G

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