There are no models available for this part yet.
Overview of IRFH4251DTRPBF by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFH4251DTRPBF by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
19X2758
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Newark | Mosfet, Dual N Channel, 25V, 188A, Pqfn-10, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:188A, No. Of Pins:10Pins, Qualification:- Rohs Compliant: Yes |Infineon IRFH4251DTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now |
CAD Models for IRFH4251DTRPBF by Infineon Technologies AG
Part Data Attributes for IRFH4251DTRPBF by Infineon Technologies AG
|
|
|
|---|---|
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Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
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Reach Compliance Code
|
compliant
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|
ECCN Code
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EAR99
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|
Factory Lead Time
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53 Weeks, 4 Days
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Avalanche Energy Rating (Eas)
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61 mJ
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Case Connection
|
SOURCE
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Configuration
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SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
25 V
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Drain Current-Max (ID)
|
45 A
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Drain-source On Resistance-Max
|
0.0046 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
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JESD-30 Code
|
R-PDSO-N8
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Moisture Sensitivity Level
|
1
|
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Number of Elements
|
2
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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63 W
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Pulsed Drain Current-Max (IDM)
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120 A
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Surface Mount
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YES
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Terminal Form
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NO LEAD
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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