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Transistors / Power Field-Effect Transistors / IRFF333
Datasheets
IRFF333 by:

Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

Part Details for IRFF333 by Vishay Siliconix

Overview of IRFF333 by Vishay Siliconix

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Price & Stock for IRFF333

Part # Distributor Description Stock Price Buy
Bristol Electronics   11
RFQ

Part Details for IRFF333

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IRFF333 Part Data Attributes

Parametric Data
IRFF333 Vishay Siliconix
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IRFF333 Vishay Siliconix Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SILICONIX INC
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRFF333

This table gives cross-reference parts and alternative options found for IRFF333. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF333, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFF333 3A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF333 vs IRFF333
Part Number Description Manufacturer Compare
IRFP332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFF333 vs IRFP332
IRFP331 Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFF333 vs IRFP331
JAN2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation IRFF333 vs JAN2N6800
IRFF333 3A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF333 vs IRFF333
IRFF332 Power Field-Effect Transistor, 3A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF333 vs IRFF332
UFNF333 Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) IRFF333 vs UFNF333
IRFF333 Power Field-Effect Transistor, 3A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF333 vs IRFF333
JANTX2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF333 vs JANTX2N6800
JANTXV2N6800 Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF333 vs JANTXV2N6800
IRFF331 Power Field-Effect Transistor, 3.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF333 vs IRFF331

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