Part Details for IRFE9220PBF by International Rectifier
Overview of IRFE9220PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Part Details for IRFE9220PBF
IRFE9220PBF CAD Models
IRFE9220PBF Part Data Attributes
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IRFE9220PBF
International Rectifier
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Datasheet
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IRFE9220PBF
International Rectifier
Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | LCC | |
| Package Description | CHIP CARRIER, R-CQCC-N15 | |
| Pin Count | 18 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.1 A | |
| Drain-source On Resistance-Max | 1.725 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 14 W | |
| Pulsed Drain Current-Max (IDM) | 8.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 120 ns |
Alternate Parts for IRFE9220PBF
This table gives cross-reference parts and alternative options found for IRFE9220PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE9220PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFE9220 | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE9220PBF vs IRFE9220 |
| IRFE9220-JQR-BE4 | 2.1A, 200V, 1.725ohm, P-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | IRFE9220PBF vs IRFE9220-JQR-BE4 |
| IRFE9220-JQR-B | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE9220PBF vs IRFE9220-JQR-B |
| IRFE9220-JQR-BE4 | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE9220PBF vs IRFE9220-JQR-BE4 |
| IRFE9220E4 | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE9220PBF vs IRFE9220E4 |
| IRFE9220-JQR-B | 2.1A, 200V, 1.725ohm, P-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | IRFE9220PBF vs IRFE9220-JQR-B |
| JANTX2N6847U | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | IRFE9220PBF vs JANTX2N6847U |