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Part Details for IRFD9110PBF by Vishay Intertechnologies
Overview of IRFD9110PBF by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFD9110PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K1994
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Newark | Mosfet Transistor, P Channel, 700 Ma, 100 V, 1.2 Ohm, -10 V, -4 V Rohs Compliant: Yes |Vishay IRFD9110PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2790 |
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$0.8450 / $1.4700 | Buy Now |
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DISTI #
19K8165
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Newark | P Channel Mosfet, -100V, 700Ma Hd-1, Transistor Polarity:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:700Ma, On Resistance Rds(On):1.2Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay IRFD9110PBF Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.9830 | Buy Now |
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DISTI #
97K1994
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Avnet Americas | MOSFET P-CHANNEL 100V - Bulk (Alt: 97K1994) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk | 0 |
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$0.9880 / $1.6300 | Buy Now |
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DISTI #
70078899
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RS | MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 1.2 Ohms, ID -0.7A, HD-1,PD 1.3W, VGS +/-20V | Vishay PCS IRFD9110PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$1.2600 / $1.4800 | RFQ |
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Future Electronics | Single P-Channel 100 V 1.2 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 100 Container: Tube | 0Tube |
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$0.5350 / $0.6300 | Buy Now |
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DISTI #
IRFD9110PBF
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TTI | MOSFETs HVMDIP 100V .7A P-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 2150 In Stock |
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$0.5900 / $1.1300 | Buy Now |
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DISTI #
IRFD9110PBF
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TME | Transistor: P-MOSFET, unipolar, -100V, -0.49A, 1.3W, DIP4 Min Qty: 1 | 548 |
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$0.4680 / $0.7400 | Buy Now |
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DISTI #
IRFD9110PBF
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Avnet Asia | MOSFET P-CHANNEL 100V (Alt: IRFD9110PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 | 0 |
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RFQ | |
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DISTI #
IRFD9110PBF
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EBV Elektronik | Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP (Alt: IRFD9110PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 13 Weeks, 0 Days | EBV - 500 |
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Buy Now | |
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LCSC | 100V 700mA 1.3W 1.210V420mA 4V250uA 1 Piece P-Channel HVMDIP-4 MOSFETs ROHS | 70 |
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$0.5576 / $1.0177 | Buy Now |
Part Details for IRFD9110PBF
IRFD9110PBF CAD Models
IRFD9110PBF Part Data Attributes
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IRFD9110PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFD9110PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.7 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 5.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |