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Part Details for IRFD014PBF by Vishay Intertechnologies
Overview of IRFD014PBF by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFD014PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
19K8150
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Newark | N Channel Mosfet, 60V, 1.7A, Hd-1, Transistor Polarity:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:1.7A, On Resistance Rds(On):0.2Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay IRFD014PBF Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8360 | Buy Now |
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DISTI #
IRFD014PBF
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Avnet Americas | Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP - Bulk (Alt: IRFD014PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
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$0.5400 / $0.6860 | Buy Now |
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DISTI #
97K1981
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Avnet Americas | Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP - Bulk (Alt: 97K1981) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Bulk | 0 |
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$0.3840 / $0.8160 | Buy Now |
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DISTI #
70079028
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RS | Power MOSFET, N-Ch, VDSS 60V, RDS(ON) 0.2Ohm, ID 1.7A, HD-1,PD 1.3W, VGS+/-20V, Qg 11nC | Vishay PCS IRFD014PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$1.1300 / $1.3300 | RFQ |
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Future Electronics | Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 100 Container: Tube | 0Tube |
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$0.5050 / $0.5900 | Buy Now |
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DISTI #
IRFD014PBF
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TTI | MOSFET 60V N-CH HEXFET MOSFET HEXDI RoHS: Compliant pbFree: Pb-Free Min Qty: 100 Package Multiple: 100 Container: Tube |
Americas - 5300 In Stock |
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$0.5000 / $0.5630 | Buy Now |
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DISTI #
IRFD014PBF
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TME | Transistor: N-MOSFET, unipolar, 60V, 1.2A, 1.3W, DIP4 Min Qty: 1 | 1521 |
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$0.3500 / $0.7700 | Buy Now |
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DISTI #
IRFD014PBF
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EBV Elektronik | Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP (Alt: IRFD014PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 13 Weeks, 0 Days | EBV - 9800 |
|
Buy Now | |
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New Advantage Corporation | SOT-23-5 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 7800 |
|
$0.7722 / $0.8299 | Buy Now |
Part Details for IRFD014PBF
IRFD014PBF CAD Models
IRFD014PBF Part Data Attributes:
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IRFD014PBF
Vishay Intertechnologies
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Datasheet
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IRFD014PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | DIP | |
| Package Description | IN-LINE, R-PDIP-T3 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 4 Days | |
| Samacsys Description | Vishay IRFD014PBF N-channel MOSFET Transistor, 1.7 A, 60 V, 4-pin HVMDIP, HexDIP | |
| Samacsys Manufacturer | Vishay | |
| Samacsys Modified On | 2023-03-07 16:10:32 | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |