There are no models available for this part yet.
Overview of IRFBL12N50A by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for IRFBL12N50A by International Rectifier
Part Data Attributes for IRFBL12N50A by International Rectifier
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|---|---|
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Rohs Code
|
No
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Package Description
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SUPER D2PAK-3
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Pin Count
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3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
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430 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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500 V
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Drain Current-Max (ID)
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13 A
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Drain-source On Resistance-Max
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0.45 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PSSO-F2
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JESD-609 Code
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e0
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
|
225
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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180 W
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Pulsed Drain Current-Max (IDM)
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52 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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Tin/Lead (Sn/Pb)
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Terminal Form
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FLAT
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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30
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRFBL12N50A
This table gives cross-reference parts and alternative options found for IRFBL12N50A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBL12N50A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF450PBF | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRFBL12N50A vs IRF450PBF |
| IXTI12N50P | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN | Littelfuse Inc | IRFBL12N50A vs IXTI12N50P |
| IXTA12N50P | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IRFBL12N50A vs IXTA12N50P |
| IXFP12N50P | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IRFBL12N50A vs IXFP12N50P |
| IXTI12N50P | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC, LEADED TO-263, 3 PIN | IXYS Corporation | IRFBL12N50A vs IXTI12N50P |
| IXTA12N50P | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXYS Corporation | IRFBL12N50A vs IXTA12N50P |
| FML12N50ES | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | IRFBL12N50A vs FML12N50ES |
| FMC12N50ES | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN | Fuji Electric Co Ltd | IRFBL12N50A vs FMC12N50ES |
| IXTP12N50P | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IRFBL12N50A vs IXTP12N50P |