Datasheets
IRFBC40LPBF by:

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3

Part Details for IRFBC40LPBF by Vishay Siliconix

Overview of IRFBC40LPBF by Vishay Siliconix

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40LPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFBC40LPBF-ND
DigiKey MOSFET N-CH 600V 6.2A TO262-3 Min Qty: 1000 Lead time: 10 Weeks Container: Tube Temporarily Out of Stock
  • 1,000 $2.2125
$2.2125 Buy Now

Part Details for IRFBC40LPBF

IRFBC40LPBF CAD Models

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IRFBC40LPBF Part Data Attributes:

IRFBC40LPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFBC40LPBF Vishay Siliconix Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBC40LPBF

This table gives cross-reference parts and alternative options found for IRFBC40LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40LPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN Vishay Intertechnologies IRFBC40LPBF vs IRFBC40LPBF
SIHFBC40L-GE3 TRANSISTOR 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power Vishay Siliconix IRFBC40LPBF vs SIHFBC40L-GE3
IRFBC40L Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRFBC40LPBF vs IRFBC40L
Part Number Description Manufacturer Compare
2SK2777(2-10S1B) TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRFBC40LPBF vs 2SK2777(2-10S1B)
STB6NK60Z-1 N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET STMicroelectronics IRFBC40LPBF vs STB6NK60Z-1
FQI12N60TU Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRFBC40LPBF vs FQI12N60TU
IRFSL9N60ATRL Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRFBC40LPBF vs IRFSL9N60ATRL
IRFBC40L Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier IRFBC40LPBF vs IRFBC40L
STB11NM60Z-1 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 STMicroelectronics IRFBC40LPBF vs STB11NM60Z-1
FMI06N60ES Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN Fuji Electric Co Ltd IRFBC40LPBF vs FMI06N60ES
IRFSL11N50APBF Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Siliconix IRFBC40LPBF vs IRFSL11N50APBF
FQI7N60 Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation IRFBC40LPBF vs FQI7N60
2SK3889-01L Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN Fuji Electric Co Ltd IRFBC40LPBF vs 2SK3889-01L

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