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Transistors / Power Field-Effect Transistors / IRFB4310ZPBF
Datasheets
IRFB4310ZPBF by:

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRFB4310ZPBF by Infineon Technologies AG

Overview of IRFB4310ZPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRFB4310ZPBF

Part # Distributor Description Stock Price Buy
DISTI # 61M6835
Newark Mosfet, N, 100V, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:127A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0056Ohm, Rds(On) Test Voltage Vgs:20V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRFB4310ZPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1765
  • 1 $3.4600
  • 10 $2.9800
  • 25 $2.9000
  • 50 $2.6800
  • 100 $2.4600
  • 250 $2.3900
  • 500 $2.1900
$2.1900 / $3.4600 Buy Now
DISTI # IRFB4310ZPBF-ND
DigiKey MOSFET N-CH 100V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube 1793
In Stock
  • 1 $3.4900
  • 10 $2.9300
  • 100 $2.3703
  • 500 $2.1069
  • 1,000 $1.8041
  • 2,000 $1.6987
  • 5,000 $1.6298
$1.6298 / $3.4900 Buy Now
DISTI # IRFB4310ZPBF
Avnet Americas Trans MOSFET N-CH 100V 127A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4310ZPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.7927
  • 1,200 $1.7384
  • 2,200 $1.6841
  • 5,000 $1.6298
  • 10,000 $1.5754
  • 50,000 $1.5211
  • 100,000 $1.4668
$1.4668 / $1.7927 Buy Now
DISTI # 942-IRFB4310ZPBF
Mouser Electronics MOSFET MOSFT 100V 127A 6mOhm 120nC Qg RoHS: Compliant 1015
  • 1 $3.3300
  • 10 $2.8700
  • 25 $2.7900
  • 100 $2.3700
  • 250 $2.3000
  • 500 $2.1100
  • 1,000 $1.8000
  • 2,000 $1.6900
$1.6900 / $3.3300 Buy Now
Future Electronics Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 37
Tube
  • 1 $1.8900
  • 40 $1.8300
  • 125 $1.7900
  • 400 $1.7400
  • 1,250 $1.6600
$1.6600 / $1.8900 Buy Now
Future Electronics Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.8300
  • 200 $1.7700
  • 500 $1.7400
  • 1,250 $1.7100
  • 2,000 $1.6600
$1.6600 / $1.8300 Buy Now
Quest Components   31
  • 1 $4.5360
  • 8 $3.3264
  • 24 $3.0240
$3.0240 / $4.5360 Buy Now
DISTI # IRFB4310ZPBF
TME Transistor: N-MOSFET, unipolar, 100V, 127A, 250W, TO220AB Min Qty: 1 12
  • 1 $3.1900
  • 10 $2.4100
  • 50 $2.1400
  • 100 $2.0200
$2.0200 / $3.1900 Buy Now
Ameya Holding Limited Single N-Channel 100 V 6 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3 12530
RFQ
DISTI # TMOSP12126
Rutronik N-CH 100V 127A 6mOhm TO220-3 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 1000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $1.7300
  • 150 $1.6300
  • 250 $1.5300
  • 500 $1.3800
  • 1,000 $1.3400
$1.3400 / $1.7300 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 990
  • 1 $2.3110
  • 10 $1.8950
  • 50 $1.6330
  • 100 $1.5970
  • 500 $1.5910
  • 1,000 $1.5120
$1.5120 / $2.3110 Buy Now
DISTI # SP001570588
EBV Elektronik Trans MOSFET N-CH 100V 127A 3-Pin(3+Tab) TO-220AB (Alt: SP001570588) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days EBV - 67000
Buy Now
LCSC 100V 120A 6m10V75A 250W 4V150uA 1PCSNChannel TO-220-3 MOSFETs ROHS 1572
  • 1 $1.2526
  • 10 $1.0686
  • 50 $0.9533
  • 100 $0.8365
  • 500 $0.7825
  • 1,000 $0.7592
$0.7592 / $1.2526 Buy Now
New Advantage Corporation Single N-Channel 100 V 6 mOhm 120 nC HEXFET� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 2650
  • 150 $1.4000
  • 2,650 $1.3100
$1.3100 / $1.4000 Buy Now
Sense Electronic Company Limited TO-220 5000
RFQ

Part Details for IRFB4310ZPBF

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IRFB4310ZPBF Part Data Attributes:

Parametric Data
IRFB4310ZPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFB4310ZPBF Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 130 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 560 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFB4310ZPBF

This table gives cross-reference parts and alternative options found for IRFB4310ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB4310ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STP8NM60 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFB4310ZPBF vs STP8NM60
STP7NK40Z N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package STMicroelectronics IRFB4310ZPBF vs STP7NK40Z
STD86N3LH5 Automotive-grade N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET H5 Power MOSFET in a DPAK package STMicroelectronics IRFB4310ZPBF vs STD86N3LH5
STD7NK40ZT4 N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in DPAK package STMicroelectronics IRFB4310ZPBF vs STD7NK40ZT4
STP9NK65Z N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET STMicroelectronics IRFB4310ZPBF vs STP9NK65Z
STP80NF10 N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET STMicroelectronics IRFB4310ZPBF vs STP80NF10
STP16NF06 N-Channel 60V - 0.08Ohm - 16A - TO-220 StripFET(TM) II POWER MOSFET STMicroelectronics IRFB4310ZPBF vs STP16NF06
IPB45N06S4L08ATMA3 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRFB4310ZPBF vs IPB45N06S4L08ATMA3
STD18N55M5 N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package STMicroelectronics IRFB4310ZPBF vs STD18N55M5
STP36NF06L N-CHANNEL 60V - 0.032 Ohm - 30A TO-220 STRIPFET(TM) II MOSFET STMicroelectronics IRFB4310ZPBF vs STP36NF06L

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