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Part Details for IRF9310PBF by Infineon Technologies AG
Overview of IRF9310PBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF9310PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF9310PBF-ND
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DigiKey | MOSFET P-CH 30V 20A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Bristol Electronics | 130 |
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RFQ | ||
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Win Source Electronics | Trans MOSFET P-CH 30V 20A 8-Pin SOIC N Tube / HEXFET Power MOSFET | MOSFET P-CH 30V 20A 8-SOIC | 128700 |
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$0.4530 / $0.6790 | Buy Now |
Part Details for IRF9310PBF
IRF9310PBF CAD Models
IRF9310PBF Part Data Attributes
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IRF9310PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF9310PBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 630 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 880 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF9310PBF
This table gives cross-reference parts and alternative options found for IRF9310PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9310PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9310PBF-1 | Power Field-Effect Transistor, | Infineon Technologies AG | IRF9310PBF vs IRF9310PBF-1 |
| FDS6681Z | 20000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SO-8 | Rochester Electronics LLC | IRF9310PBF vs FDS6681Z |
| IRF9310TRPBF | Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF9310PBF vs IRF9310TRPBF |
| FDS6681Z | Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | Fairchild Semiconductor Corporation | IRF9310PBF vs FDS6681Z |