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Part Details for IRF8910PBF by Infineon Technologies AG
Overview of IRF8910PBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF8910PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF8910PBF-ND
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DigiKey | MOSFET 2N-CH 20V 10A 8SO Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
SMC-IRF8910PBF
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Sensible Micro Corporation | Transistor,Irf8910,Pwr Mosfet,So8,Smd RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 07+ Container: Tubes | 358 |
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$0.4320 / $0.4680 | RFQ |
Part Details for IRF8910PBF
IRF8910PBF CAD Models
IRF8910PBF Part Data Attributes
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IRF8910PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8910PBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 19 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0134 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 82 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF8910PBF
This table gives cross-reference parts and alternative options found for IRF8910PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8910PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF8910PBF-1 | Power Field-Effect Transistor, | Infineon Technologies AG | IRF8910PBF vs IRF8910PBF-1 |
| IRF8910GPBF | Power Field-Effect Transistor, | Infineon Technologies AG | IRF8910PBF vs IRF8910GPBF |
| IRF8910TR | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | IRF8910PBF vs IRF8910TR |
| IRF8910PBF | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF8910PBF vs IRF8910PBF |
| IRF8910GPBF | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | International Rectifier | IRF8910PBF vs IRF8910GPBF |
| IRF8910 | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF8910PBF vs IRF8910 |
| IRF8910TRPBF-1 | Power Field-Effect Transistor | Infineon Technologies AG | IRF8910PBF vs IRF8910TRPBF-1 |
| IRF8910 | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF8910PBF vs IRF8910 |