There are no models available for this part yet.
Overview of IRF831 by STMicroelectronics
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 8 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF831 by STMicroelectronics
Part Data Attributes for IRF831 by STMicroelectronics
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
Part Package Code
|
SFM
|
Package Description
|
TO-220, 3 PIN
|
Pin Count
|
3
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Additional Feature
|
HIGH VOLTAGE, FAST SWITCHING
|
Avalanche Energy Rating (Eas)
|
280 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
450 V
|
Drain Current-Max (ID)
|
4.5 A
|
Drain-source On Resistance-Max
|
1.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
55 pF
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
100 W
|
Power Dissipation-Max (Abs)
|
75 W
|
Pulsed Drain Current-Max (IDM)
|
15 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
205 ns
|
Turn-on Time-Max (ton)
|
102 ns
|
Alternate Parts for IRF831
This table gives cross-reference parts and alternative options found for IRF831. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF831, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF831 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,4.5A I(D),TO-220AB | National Semiconductor Corporation | IRF831 vs IRF831 |
IRF831 | 4.5A, 450V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF831 vs IRF831 |
IRF831 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF831 vs IRF831 |
IRF831 | 4.5A, 450V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF831 vs IRF831 |
IRF831 | Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF831 vs IRF831 |
IRF831 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF831 vs IRF831 |
IRF831 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,4.5A I(D),TO-220AB | Texas Instruments | IRF831 vs IRF831 |
IRF831 | Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF831 vs IRF831 |
IRF831 | Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF831 vs IRF831 |
IRF831 | 4.5A, 450V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF831 vs IRF831 |