Datasheets
IRF830S by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for IRF830S by Fairchild Semiconductor Corporation

Overview of IRF830S by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRF830S

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IRF830S Part Data Attributes

IRF830S Fairchild Semiconductor Corporation
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IRF830S Fairchild Semiconductor Corporation Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 4.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74 W
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRF830S

This table gives cross-reference parts and alternative options found for IRF830S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF830SPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier IRF830S vs IRF830SPBF
IRF830S IRF830S Microsemi Corporation IRF830S vs IRF830S
IRF830STRR Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF830S vs IRF830STRR
IRF830STRRPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier IRF830S vs IRF830STRRPBF
IRF830S Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier IRF830S vs IRF830S
IRF830SPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix IRF830S vs IRF830SPBF

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