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Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7407
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Newark | N Channel Mosfet, 500V, 5A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V, Msl:- Rohs Compliant: Yes |Vishay IRF830APBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 866 |
|
$0.7290 | Buy Now |
DISTI #
IRF830APBF
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Avnet Americas | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF830APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 600 |
|
$0.6157 / $0.7822 | Buy Now |
DISTI #
63J7407
|
Avnet Americas | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7407) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Bulk | 866 Partner Stock |
|
$1.1600 / $1.6300 | Buy Now |
DISTI #
844-IRF830APBF
|
Mouser Electronics | MOSFET RECOMMENDED ALT IRF830A RoHS: Compliant | 1166 |
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$0.8230 / $1.0600 | Buy Now |
DISTI #
V36:1790_09218650
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Arrow Electronics | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2315 | Americas - 300 |
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$0.5693 / $0.7724 | Buy Now |
DISTI #
V99:2348_09218650
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Arrow Electronics | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2219 | Americas - 28 |
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$0.6123 | Buy Now |
DISTI #
70078864
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RS | MOSFET, Power, N-Ch, VDSS 500V, RDS(ON) 1.4 Ohms, ID 5A, TO-220AB, PD 74W, VGS +/-30V | Vishay PCS IRF830APBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 945 |
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$0.7700 | Buy Now |
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Future Electronics | Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 100Tube |
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$0.5900 / $0.7250 | Buy Now |
|
Future Electronics | Single N-Channel 500 V 1.4 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.5900 / $0.7250 | Buy Now |
DISTI #
31346333
|
Verical | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 69 Package Multiple: 1 | Americas - 866 |
|
$1.1014 / $1.2462 | Buy Now |
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IRF830APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF830APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4.3 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF830APBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830APBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF830A | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF830APBF vs IRF830A |
IRF830APBF | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF830APBF vs IRF830APBF |
IRF830A | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF830APBF vs IRF830A |
IRF830A | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF830APBF vs IRF830A |
IRF830A | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF830APBF vs IRF830A |
IRF830A | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF830APBF vs IRF830A |
IRF830A | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF830APBF vs IRF830A |
IRF830A | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF830APBF vs IRF830A |