There are no models available for this part yet.
Overview of IRF8308MTRPBF by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 1 cross )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF8308MTRPBF by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRF8308MTRPBF
|
Avnet Americas | Trans MOSFET N-CH 30V 27A 7-Pin Direct-FET MX T/R - Tape and Reel (Alt: IRF8308MTRPBF) RoHS: Compliant Min Qty: 316 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 10644 Partner Stock |
|
$1.0058 / $1.1326 | Buy Now |
CAD Models for IRF8308MTRPBF by Infineon Technologies AG
Part Data Attributes for IRF8308MTRPBF by Infineon Technologies AG
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
4 Weeks
|
|
Samacsys Manufacturer
|
Infineon
|
|
Avalanche Energy Rating (Eas)
|
12 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
27 A
|
|
Drain-source On Resistance-Max
|
0.0035 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-XBCC-N3
|
|
JESD-609 Code
|
e1
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
UNSPECIFIED
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
CHIP CARRIER
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
89 W
|
|
Pulsed Drain Current-Max (IDM)
|
212 A
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
|
Terminal Form
|
NO LEAD
|
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Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
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Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRF8308MTRPBF
This table gives cross-reference parts and alternative options found for IRF8308MTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8308MTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF8308MPBF | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Infineon Technologies AG | IRF8308MTRPBF vs IRF8308MPBF |