Part Details for IRF820 by STMicroelectronics
Overview of IRF820 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRF820
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 58 |
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RFQ | ||
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Bristol Electronics | 411 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 49 |
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$0.4200 / $0.6300 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 47 |
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$0.5450 / $1.0900 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 46 |
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$1.2500 / $2.5000 | Buy Now |
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Win Source Electronics | MOSFET N-CH 500V 4A TO-220 / N-CHANNEL Enhancement-Mode Silicon Gate TMOS | 29936 |
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$0.5660 / $0.8480 | Buy Now |
Part Details for IRF820
IRF820 CAD Models
IRF820 Part Data Attributes:
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IRF820
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF820
STMicroelectronics
4A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 50 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 245 ns | |
Turn-on Time-Max (ton) | 137 ns |
Alternate Parts for IRF820
This table gives cross-reference parts and alternative options found for IRF820. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF820, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF820 | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF820 vs IRF820 |
IRF820 | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF820 vs IRF820 |
IRF820PBF | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Intertechnologies | IRF820 vs IRF820PBF |
IRF820 | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | IRF820 vs IRF820 |
IRF820 | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF820 vs IRF820 |
IRF820 | 2.5A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF820 vs IRF820 |