Part Details for IRF7493TRPBF by Infineon Technologies AG
Overview of IRF7493TRPBF by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7493TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9202
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Newark | Mosfet, N-Ch, 80V, 9.3A, Soic, Transistor Polarity:N Channel, Continuous Drain Current Id:9.3A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0115Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Rohs Compliant: Yes |Infineon IRF7493TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 629 |
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$0.8080 / $1.3000 | Buy Now |
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DISTI #
86AK5382
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Newark | Mosfet, N-Ch, 80V, 9.3A, Soic Rohs Compliant: Yes |Infineon IRF7493TRPBF RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6350 / $0.6830 | Buy Now |
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DISTI #
IRF7493PBFCT-ND
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DigiKey | MOSFET N-CH 80V 9.3A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8493 In Stock |
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$0.6102 / $2.1500 | Buy Now |
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DISTI #
IRF7493TRPBF
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Avnet Americas | Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7493TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 20000 |
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$0.5086 | Buy Now |
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DISTI #
IRF7493TRPBF
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Avnet Americas | Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7493TRPBF) RoHS: Compliant Min Qty: 513 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 12000 Partner Stock |
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$0.6052 / $0.7120 | Buy Now |
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DISTI #
942-IRF7493TRPBF
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Mouser Electronics | MOSFETs MOSFT 80V 9.2A 15mOhm 31nC Qg RoHS: Compliant | 7024 |
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$0.6100 / $1.3200 | Buy Now |
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Future Electronics | Single N-Channel 80 V 15 mOhm 53 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 36000Reel |
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$0.5000 / $0.5200 | Buy Now |
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Future Electronics | Single N-Channel 80 V 15 mOhm 53 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.4750 / $0.4900 | Buy Now |
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Rochester Electronics | IRF7493 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 12000 |
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$0.6052 / $0.7120 | Buy Now |
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DISTI #
IRF7493TRPBF
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TME | Transistor: N-MOSFET, unipolar, 80V, 9.2A, 2.5W, SO8 Min Qty: 4000 | 0 |
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$0.4020 | RFQ |
Part Details for IRF7493TRPBF
IRF7493TRPBF CAD Models
IRF7493TRPBF Part Data Attributes
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IRF7493TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7493TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 9.3 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 74 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7493TRPBF
This table gives cross-reference parts and alternative options found for IRF7493TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7493TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7493PBF | Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7493TRPBF vs IRF7493PBF |
| IRF7493PBF | Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7493TRPBF vs IRF7493PBF |