Datasheets
IRF7470PBF by:

Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7470PBF by Infineon Technologies AG

Overview of IRF7470PBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF7470PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7470PBF-ND
DigiKey MOSFET N-CH 40V 10A 8SO Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # IRF7470PBF
Avnet Americas Trans MOSFET N-CH 40V 10A 8-Pin SOIC - Rail/Tube (Alt: IRF7470PBF) RoHS: Compliant Min Qty: 926 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 1065 Partner Stock
  • 926 $0.3861
  • 930 $0.3807
  • 1,900 $0.3780
  • 4,700 $0.3672
  • 9,300 $0.3591
  • 47,000 $0.3483
  • 93,000 $0.3429
$0.3429 / $0.3861 Buy Now
DISTI # 70016997
RS MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 9 Milliohms, ID 10A, SO-8,PD 2.5W, VGS +/-12V | Infineon IRF7470PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $1.1100
$1.1100 RFQ
Rochester Electronics IRF7470 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 1056
  • 1 $0.3938
  • 25 $0.3859
  • 100 $0.3702
  • 500 $0.3544
  • 1,000 $0.3347
$0.3347 / $0.3938 Buy Now

Part Details for IRF7470PBF

IRF7470PBF CAD Models

IRF7470PBF Part Data Attributes

IRF7470PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7470PBF Infineon Technologies AG Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 85 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7470PBF

This table gives cross-reference parts and alternative options found for IRF7470PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7470PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7470TR Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7470PBF vs IRF7470TR
IRF7470TRPBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG IRF7470PBF vs IRF7470TRPBF
IRF7470PBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7470PBF vs IRF7470PBF
Part Number Description Manufacturer Compare
IRF7470TR Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7470PBF vs IRF7470TR
UPA2706GR Power Field-Effect Transistor, 11A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 NEC Electronics Group IRF7470PBF vs UPA2706GR
UPA2706GR-A Power Field-Effect Transistor, 11A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 NEC Electronics Group IRF7470PBF vs UPA2706GR-A
IRF7469TRPBF Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7470PBF vs IRF7469TRPBF
IRF7469PBF Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7470PBF vs IRF7469PBF
IRF7469PBF Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7470PBF vs IRF7469PBF
IRF7470PBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7470PBF vs IRF7470PBF
TPCA8016-H TRANSISTOR 25 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components IRF7470PBF vs TPCA8016-H
IRF7470TRPBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG IRF7470PBF vs IRF7470TRPBF
UPA2706GR-A 11A, 30V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8 Renesas Electronics Corporation IRF7470PBF vs UPA2706GR-A

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