| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IRF7406PBF-ND
|
DigiKey | MOSFET P-CH 30V 5.8A 8SO Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
|
Buy Now | ||
|
DISTI #
70017526
|
RS | MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.045Ohm, ID -5.8A, SO-8,PD 2.5W, VGS +/-20V | Infineon IRF7406PBF RoHS: Not Compliant Min Qty: 3800 Package Multiple: 1 Container: Bulk | 0 |
|
$0.6200 / $0.7800 | RFQ | |
| Win Source Electronics | HEXFET®Power MOSFET | MOSFET P-CH 30V 5.8A 8-SOIC | 4930 |
|
$0.9030 / $1.3550 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Infineon
|
|
Additional Feature
|
LOGIC LEVEL COMPATIBLE
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
6.7 A
|
|
Drain-source On Resistance-Max
|
0.045 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
MS-012AA
|
|
JESD-30 Code
|
R-PDSO-G8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
1.6 W
|
|
Pulsed Drain Current-Max (IDM)
|
23 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn)
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7406PBF | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7406PBF vs IRF7406PBF |
| IRF7406TRPBF | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | IRF7406PBF vs IRF7406TRPBF |
| IRF7406TR | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | IRF7406PBF vs IRF7406TR |
| IRF7406TR | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | IRF7406PBF vs IRF7406TR |
| IRF7406TRPBF | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7406PBF vs IRF7406TRPBF |
| IRF7406GPBF | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | Infineon Technologies AG | IRF7406PBF vs IRF7406GPBF |
| IRF7406GPBF | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | International Rectifier | IRF7406PBF vs IRF7406GPBF |
