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Transistors / Power Field-Effect Transistors / IRF7341
Datasheets
IRF7341 by:

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Part Details for IRF7341 by Infineon Technologies AG

Overview of IRF7341 by Infineon Technologies AG

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Applications Industrial Automation Automotive Motor control systems

Part Details for IRF7341

IRF7341 Part Data Attributes

Parametric Data
IRF7341 Infineon Technologies AG
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IRF7341 Infineon Technologies AG Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 140 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 42 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7341

This table gives cross-reference parts and alternative options found for IRF7341. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7341, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AUIRF7341QTR Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341 vs AUIRF7341QTR
IRF7341PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7341 vs IRF7341PBF
AUIRF7341Q Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341 vs AUIRF7341Q
IRF7341TRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7341 vs IRF7341TRPBF
IRF7341UTRPBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 International Rectifier IRF7341 vs IRF7341UTRPBF
IRF7341TR Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7341 vs IRF7341TR
IRF7341Q Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7341 vs IRF7341Q
IRF7341GTRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341 vs IRF7341GTRPBF
IRF7341QTRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7341 vs IRF7341QTRPBF
IRF7341GPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341 vs IRF7341GPBF
Part Number Description Manufacturer Compare
IRF7341PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7341 vs IRF7341PBF
IRF7341GTRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341 vs IRF7341GTRPBF
IRF7341Q Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7341 vs IRF7341Q
IRF7341PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7341 vs IRF7341PBF
IRF7341QTRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7341 vs IRF7341QTRPBF
AUIRF7341QTR Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7341 vs AUIRF7341QTR
IRF7341TR Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7341 vs IRF7341TR
AUIRF7341QTR Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341 vs AUIRF7341QTR
IRF7341TRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7341 vs IRF7341TRPBF
IRF7341GPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341 vs IRF7341GPBF

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