IRF7316QPBF
Description: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8

Overview of IRF7316QPBF by Infineon Technologies AG

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Part Data Attributes for IRF7316QPBF by Infineon Technologies AG

IRF7316QPBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
LEAD FREE, SOP-8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
140 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
4.9 A
Drain-source On Resistance-Max
0.058 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
2
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
30 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7316QPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
    VS

Alternate Parts for IRF7316QPBF

This table gives cross-reference parts and alternative options found for IRF7316QPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7316QPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7316TR Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7316QPBF vs IRF7316TR
IRF7316GPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7316QPBF vs IRF7316GPBF
UTM4953G-H-S08-R Power Field-Effect Transistor, Unisonic Technologies Co Ltd IRF7316QPBF vs UTM4953G-H-S08-R
IRF7316TRPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7316QPBF vs IRF7316TRPBF
AUIRF7316Q Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7316QPBF vs AUIRF7316Q
IRF7316TR Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7316QPBF vs IRF7316TR
UTM4953L-S08-R Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Unisonic Technologies Co Ltd IRF7316QPBF vs UTM4953L-S08-R
IRF7316PBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7316QPBF vs IRF7316PBF
TSM4953DCSRLG Power Field-Effect Transistor Taiwan Semiconductor IRF7316QPBF vs TSM4953DCSRLG
UTM4953L-H-S08-R Power Field-Effect Transistor, Unisonic Technologies Co Ltd IRF7316QPBF vs UTM4953L-H-S08-R
Part Number Description Manufacturer Compare
AUIRF7316QTR Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7316QPBF vs AUIRF7316QTR
AUIRF7316Q Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7316QPBF vs AUIRF7316Q
IRF7316TR Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7316QPBF vs IRF7316TR
UTM4953L-S08-R Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Unisonic Technologies Co Ltd IRF7316QPBF vs UTM4953L-S08-R
IRF7316PBF-1 Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET Infineon Technologies AG IRF7316QPBF vs IRF7316PBF-1
TSM4953DCSRFG Power Field-Effect Transistor Taiwan Semiconductor IRF7316QPBF vs TSM4953DCSRFG
IRF7316PBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7316QPBF vs IRF7316PBF
UTM4953L-H-S08-R Power Field-Effect Transistor, Unisonic Technologies Co Ltd IRF7316QPBF vs UTM4953L-H-S08-R
TSM4953DCSRLG Power Field-Effect Transistor Taiwan Semiconductor IRF7316QPBF vs TSM4953DCSRLG
IRF7316TRPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7316QPBF vs IRF7316TRPBF

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