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Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42Y0406
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Newark | Mosfet, P-Ch, 20V, 5.3A, Soic, Channel Type:P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:5.3A, Continuous Drain Current Id P Channel:5.3A Rohs Compliant: Yes |Infineon IRF7314TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5886 |
|
$0.3970 / $0.8940 | Buy Now |
DISTI #
86AK5372
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Newark | Mosfet, P-Ch, 20V, 5.3A, Soic Rohs Compliant: Yes |Infineon IRF7314TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.3360 / $0.3620 | Buy Now |
DISTI #
IRF7314PBFCT-ND
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DigiKey | MOSFET 2P-CH 20V 5.3A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14 In Stock |
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$0.3234 / $0.8600 | Buy Now |
DISTI #
IRF7314TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 5.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7314TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3018 / $0.3450 | Buy Now |
DISTI #
IRF7314TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 5.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7314TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3018 / $0.3450 | Buy Now |
DISTI #
42Y0406
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 5.3A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled (Alt: 42Y0406) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 463 Partner Stock |
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$0.5700 / $0.8940 | Buy Now |
DISTI #
942-IRF7314TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL PCh -20V 5.3A RoHS: Compliant | 5065 |
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$0.3230 / $0.8600 | Buy Now |
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Future Electronics | Dual P-Channel 20V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Container: Reel | 0Reel |
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$0.3000 / $0.3150 | Buy Now |
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Future Electronics | Dual P-Channel 20V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Container: Reel | 0Reel |
|
$0.3000 / $0.3150 | Buy Now |
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Rochester Electronics | IRF7314 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 68 |
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$0.3207 / $0.3773 | Buy Now |
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IRF7314TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7314TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5.3 A | |
Drain-source On Resistance-Max | 0.058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 21 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7314TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7314TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7314TRPBF | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE PACKAGE-8 | International Rectifier | IRF7314TRPBF vs IRF7314TRPBF |
IRF7314Q | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | IRF7314TRPBF vs IRF7314Q |