Datasheets
IRF712 by:

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.7A I(D),TO-220AB

Part Details for IRF712 by Intersil Corporation

Overview of IRF712 by Intersil Corporation

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Part Details for IRF712

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IRF712 Part Data Attributes

IRF712 Intersil Corporation
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IRF712 Intersil Corporation TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,1.7A I(D),TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 1.7 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRF712

This table gives cross-reference parts and alternative options found for IRF712. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF712, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF713-006 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF713-006
VN2406D Power Field-Effect Transistor, 1.12A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc IRF712 vs VN2406D
IRF713-009 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF713-009
IRF713 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF712 vs IRF713
IRF712-001 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF712-001
IRF710-009 Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Intertechnologies IRF712 vs IRF710-009
IRF713-010 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF713-010
IRF712-010 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF712-010
IRF712 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF712 vs IRF712
IRF712-009 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF712-009
Part Number Description Manufacturer Compare
IRF713-009 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF713-009
IRF710PBF Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF712 vs IRF710PBF
IRF712 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF712 vs IRF712
VN2406D Power Field-Effect Transistor, 1.12A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc IRF712 vs VN2406D
STD7NB20 7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics IRF712 vs STD7NB20
IRF710 1.5A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF712 vs IRF710
IRF713-010 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF713-010
IRF712-009 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF712 vs IRF712-009
ZVN4424G Power Field-Effect Transistor, 0.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated IRF712 vs ZVN4424G
IRF710 Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF712 vs IRF710

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