There are no models available for this part yet.
Overview of IRF711 by Texas Instruments
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for IRF711 by Texas Instruments
Part Data Attributes for IRF711 by Texas Instruments
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|
|
|---|---|
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Rohs Code
|
No
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|
Part Life Cycle Code
|
Obsolete
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|
Ihs Manufacturer
|
NATIONAL SEMICONDUCTOR CORP
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Package Description
|
,
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Reach Compliance Code
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unknown
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ECCN Code
|
EAR99
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Configuration
|
SINGLE
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Drain Current-Max (ID)
|
2 A
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-609 Code
|
e0
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Number of Elements
|
1
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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|
Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation-Max (Abs)
|
36 W
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Surface Mount
|
NO
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Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Alternate Parts for IRF711
This table gives cross-reference parts and alternative options found for IRF711. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF711, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF711-001 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF711 vs IRF711-001 |
| IRF711-006 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF711 vs IRF711-006 |
| IRF711 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF711 vs IRF711 |
| IRF711 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF711 vs IRF711 |
| IRF711 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2A I(D),TO-220AB | Intersil Corporation | IRF711 vs IRF711 |
| IRF711-009 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF711 vs IRF711-009 |
| IRF711-010 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF711 vs IRF711-010 |
| IRF711 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF711 vs IRF711 |
| IRF711 | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Infineon Technologies AG | IRF711 vs IRF711 |
| IRF711PBF | Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF711 vs IRF711PBF |