Transistors
IRF710
Description: Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IRF710 by Samsung Semiconductor

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Part Data Attributes for IRF710 by Samsung Semiconductor

IRF710
Samsung Semiconductor
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
120 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
3.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
36 W
Power Dissipation-Max (Abs)
36 W
Pulsed Drain Current-Max (IDM)
5 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
49 ns
Turn-on Time-Max (ton)
27 ns
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  1. IRF710
    Samsung Semiconductor
    Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for IRF710

This table gives cross-reference parts and alternative options found for IRF710. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF710, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF710 2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF710 vs IRF710
IRF710-009 Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF710 vs IRF710-009
IRF710 Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF710 vs IRF710
IRF710 2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF710 vs IRF710
IRF710 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix IRF710 vs IRF710
IRF710 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2A I(D),TO-220AB National Semiconductor Corporation IRF710 vs IRF710
IRF710 IRF710 Texas Instruments IRF710 vs IRF710
IRF712 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF710 vs IRF712
IRF710PBF Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF710 vs IRF710PBF
IRF710-006 Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF710 vs IRF710-006
Part Number Description Manufacturer Compare
IRF713-009 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF710 vs IRF713-009
IRF710PBF Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF710 vs IRF710PBF
IRF712 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF710 vs IRF712
VN2406D Power Field-Effect Transistor, 1.12A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc IRF710 vs VN2406D
STD7NB20 7A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics IRF710 vs STD7NB20
IRF710 1.5A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF710 vs IRF710
IRF713-010 Power Field-Effect Transistor, 1.7A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF710 vs IRF713-010
IRF712-009 Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF710 vs IRF712-009
ZVN4424G Power Field-Effect Transistor, 0.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated IRF710 vs ZVN4424G
IRF710 Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF710 vs IRF710

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