Datasheets
IRF6717MTRPBF by:

Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for IRF6717MTRPBF by Infineon Technologies AG

Overview of IRF6717MTRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF6717MTRPBF

Part # Distributor Description Stock Price Buy
DISTI # 34AC1776
Newark Mosfet, N-Ch, 25V, 38A, 150Deg C, 96W, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:38A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Infineon IRF6717MTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 54
  • 1 $2.9300
  • 10 $2.4000
  • 25 $2.3000
  • 50 $2.0500
  • 100 $1.7900
  • 250 $1.6200
  • 500 $1.4600
$1.4600 / $2.9300 Buy Now
DISTI # 86AK5365
Newark Mosfet, N-Ch, 25V, 38A, Directfet Mx Rohs Compliant: Yes |Infineon IRF6717MTRPBF RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,800 $1.2800
$1.2800 Buy Now
DISTI # IRF6717MTRPBFCT-ND
DigiKey MOSFET N-CH 25V 38A DIRECTFET Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9400
In Stock
  • 1 $3.6100
  • 10 $2.3610
  • 100 $1.6521
  • 500 $1.3495
  • 1,000 $1.2523
  • 2,000 $1.2266
  • 4,800 $1.2266
$1.2266 / $3.6100 Buy Now
DISTI # 34AC1776
Avnet Americas Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R - Product that comes on tape, but is not reeled (Alt: 34AC1776) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Ammo Pack 54 Partner Stock
  • 1 $2.9300
  • 10 $2.4000
  • 25 $2.3000
  • 50 $2.0500
  • 100 $1.7900
$1.7900 / $2.9300 Buy Now
DISTI # IRF6717MTRPBF
Avnet Americas Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R - Tape and Reel (Alt: IRF6717MTRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 16 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-IRF6717MTRPBF
Mouser Electronics MOSFETs 25V 1 N-CH HEXFET 1.25mOhms 46nC RoHS: Compliant 9212
  • 1 $2.4600
  • 10 $1.8900
  • 100 $1.4800
  • 500 $1.2500
  • 1,000 $1.2300
  • 4,800 $1.2200
$1.2200 / $2.4600 Buy Now
Future Electronics Single N-Channel 25 V 1.25 mOhm 69 nC SMT HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 16 Weeks Container: Reel 0
Reel
  • 4,800 $1.2000
$1.2000 Buy Now
Future Electronics Single N-Channel 25 V 1.25 mOhm 69 nC SMT HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 16 Weeks Container: Reel 0
Reel
  • 4,800 $1.2000
$1.2000 Buy Now
Rochester Electronics IRF6717 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 115
  • 1 $1.3600
  • 25 $1.3300
  • 100 $1.2800
  • 500 $1.2200
  • 1,000 $1.1600
$1.1600 / $1.3600 Buy Now
DISTI # SMC-IRF6717MTRPBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 1386
RFQ
DISTI # C1S322000482595
Chip1Stop Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 33
  • 1 $0.7640
$0.7640 Buy Now
DISTI # SP001525458
EBV Elektronik Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R (Alt: SP001525458) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 25V 1.25m38A10V 2.35V150uA 1 N-Channel MG-WDSON-5 MOSFETs ROHS 22
  • 1 $2.2427
  • 10 $2.1909
  • 30 $2.1547
  • 100 $2.1202
$2.1202 / $2.2427 Buy Now

Part Details for IRF6717MTRPBF

IRF6717MTRPBF CAD Models

IRF6717MTRPBF Part Data Attributes

IRF6717MTRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF6717MTRPBF Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 290 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.00125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6717MTRPBF

This table gives cross-reference parts and alternative options found for IRF6717MTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6717MTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF6717MTRPBF Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 International Rectifier IRF6717MTRPBF vs IRF6717MTRPBF
IRF6717MTR1PBF Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRF6717MTRPBF vs IRF6717MTR1PBF
IRF6717MTR1PBF Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 International Rectifier IRF6717MTRPBF vs IRF6717MTR1PBF
Part Number Description Manufacturer Compare
IRF6717MTRPBF Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 International Rectifier IRF6717MTRPBF vs IRF6717MTRPBF
IRF6717MTR1PBF Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 International Rectifier IRF6717MTRPBF vs IRF6717MTR1PBF
IRF6717MPBF Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRF6717MTRPBF vs IRF6717MPBF

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