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Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1776
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Newark | Mosfet, N-Ch, 25V, 38A, 150Deg C, 96W, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:38A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Infineon IRF6717MTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 54 |
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$1.4600 / $2.9300 | Buy Now |
DISTI #
86AK5365
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Newark | Mosfet, N-Ch, 25V, 38A, Directfet Mx Rohs Compliant: Yes |Infineon IRF6717MTRPBF RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.2800 | Buy Now |
DISTI #
IRF6717MTRPBFCT-ND
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DigiKey | MOSFET N-CH 25V 38A DIRECTFET Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9400 In Stock |
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$1.2266 / $3.6100 | Buy Now |
DISTI #
34AC1776
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Avnet Americas | Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R - Product that comes on tape, but is not reeled (Alt: 34AC1776) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Ammo Pack | 54 Partner Stock |
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$1.7900 / $2.9300 | Buy Now |
DISTI #
IRF6717MTRPBF
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Avnet Americas | Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R - Tape and Reel (Alt: IRF6717MTRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
942-IRF6717MTRPBF
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Mouser Electronics | MOSFETs 25V 1 N-CH HEXFET 1.25mOhms 46nC RoHS: Compliant | 9212 |
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$1.2200 / $2.4600 | Buy Now |
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Future Electronics | Single N-Channel 25 V 1.25 mOhm 69 nC SMT HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 16 Weeks Container: Reel | 0Reel |
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$1.2000 | Buy Now |
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Future Electronics | Single N-Channel 25 V 1.25 mOhm 69 nC SMT HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 16 Weeks Container: Reel | 0Reel |
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$1.2000 | Buy Now |
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Rochester Electronics | IRF6717 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 115 |
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$1.1600 / $1.3600 | Buy Now |
DISTI #
SMC-IRF6717MTRPBF
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 1386 |
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RFQ |
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IRF6717MTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6717MTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 38 A | |
Drain-source On Resistance-Max | 0.00125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 96 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF6717MTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6717MTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF6717MTRPBF | Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | International Rectifier | IRF6717MTRPBF vs IRF6717MTRPBF |
IRF6717MTR1PBF | Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | IRF6717MTRPBF vs IRF6717MTR1PBF |
IRF6717MTR1PBF | Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | International Rectifier | IRF6717MTRPBF vs IRF6717MTR1PBF |