Part Details for IRF6655TR1PBF by International Rectifier
Overview of IRF6655TR1PBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF6655TR1PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 583 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 4.2A I(D), 100V, 0.062OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 466 |
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$1.6211 / $3.9300 | Buy Now |
Part Details for IRF6655TR1PBF
IRF6655TR1PBF CAD Models
IRF6655TR1PBF Part Data Attributes
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IRF6655TR1PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF6655TR1PBF
International Rectifier
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | ROHS COMPLIANT, ISOMETRIC-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 0.062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6655TR1PBF
This table gives cross-reference parts and alternative options found for IRF6655TR1PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6655TR1PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF6655PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | IRF6655TR1PBF vs IRF6655PBF |
| IRF6655TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 | IRF6655TR1PBF vs IRF6655TRPBF |
| IRF6655 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | IRF6655TR1PBF vs IRF6655 |
| IRF6655 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | IRF6655TR1PBF vs IRF6655 |
| IRF6655TR1 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | IRF6655TR1PBF vs IRF6655TR1 |