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Transistors / Power Field-Effect Transistors / IRF6646TRPBF
Datasheets
IRF6646TRPBF by:

Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

Part Details for IRF6646TRPBF by Infineon Technologies AG

Overview of IRF6646TRPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF6646TRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF6646TRPBFCT-ND
DigiKey MOSFET N-CH 80V 12A DIRECTFET Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6536
In Stock
  • 1 $2.8500
  • 10 $2.3710
  • 100 $1.8872
  • 500 $1.5968
  • 1,000 $1.3549
  • 2,000 $1.2872
  • 4,800 $1.1978
$1.1978 / $2.8500 Buy Now
DISTI # IRF6646TRPBF
Avnet Americas Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN T/R - Tape and Reel (Alt: IRF6646TRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-IRF6646TRPBF
Mouser Electronics MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC RoHS: Compliant 2885
  • 1 $2.6200
  • 10 $2.2600
  • 100 $1.8900
  • 250 $1.8800
  • 500 $1.6000
  • 1,000 $1.2900
  • 4,800 $1.1900
$1.1900 / $2.6200 Buy Now
DISTI # V79:2366_27167607
Arrow Electronics Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2021 Americas - 29258
  • 1 $1.7399
  • 10 $1.6119
  • 100 $1.4588
  • 250 $1.4463
  • 500 $1.3101
  • 1,000 $1.1476
$1.1476 / $1.7399 Buy Now
DISTI # V72:2272_13890363
Arrow Electronics Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2214 Container: Cut Strips Americas - 4754
  • 1 $1.9040
  • 10 $1.8830
  • 25 $1.8620
  • 100 $1.8410
  • 250 $1.8200
  • 500 $1.7990
  • 1,000 $1.7780
  • 3,000 $1.7570
$1.7570 / $1.9040 Buy Now
Future Electronics Single N-Channel 80 V 9.5 mOhm 50 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks Container: Reel 48000
Reel
  • 4,800 $1.1900
$1.1900 Buy Now
Future Electronics Single N-Channel 80 V 9.5 mOhm 50 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks Container: Reel 0
Reel
  • 4,800 $1.1900
$1.1900 Buy Now
DISTI # 65219716
Verical Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 2021 Americas - 29258
  • 6 $1.7399
  • 10 $1.6119
  • 100 $1.4588
  • 250 $1.4463
  • 500 $1.3101
  • 1,000 $1.1476
$1.1476 / $1.7399 Buy Now
DISTI # 71241754
Verical Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R RoHS: Compliant Min Qty: 24 Package Multiple: 1 Date Code: 2244 Americas - 4800
  • 24 $1.7125
  • 50 $1.5250
  • 100 $1.4625
  • 200 $1.4500
  • 500 $1.3625
  • 1,000 $1.3000
  • 2,000 $1.2875
$1.2875 / $1.7125 Buy Now
DISTI # 69076348
Verical Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2214 Americas - 4754
  • 5 $1.9040
  • 10 $1.8830
  • 25 $1.8620
  • 100 $1.8410
  • 250 $1.8200
  • 500 $1.7990
  • 1,000 $1.7780
  • 3,000 $1.7570
$1.7570 / $1.9040 Buy Now
Rochester Electronics IRF6646 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 72243
  • 1 $1.4000
  • 25 $1.3700
  • 100 $1.3100
  • 500 $1.2600
  • 1,000 $1.1900
$1.1900 / $1.4000 Buy Now
DISTI # IRF6646TRPBF
TME Transistor: N-MOSFET, unipolar, 80V, 12A, 89W, DirectFET Min Qty: 4800 0
  • 4,800 $2.1700
$2.1700 RFQ
Ameya Holding Limited   Min Qty: 10 4712
  • 10 $2.7613
  • 100 $2.6228
  • 250 $2.4401
  • 500 $2.2193
$2.2193 / $2.7613 Buy Now
Velocity Electronics Our Stock 127
RFQ
DISTI # C1S327400126638
Chip1Stop Trans MOSFET N-CH Si 80V 12A 7-Pin Direct-FET MN T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 4800
  • 1 $1.3100
  • 10 $1.0500
  • 50 $1.0300
$1.0300 / $1.3100 Buy Now
DISTI # SP001564784
EBV Elektronik Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN T/R (Alt: SP001564784) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Single N-Channel 80 V 9.5 mOhm 50 nC HEXFET� Power Mosfet - DirectFET� RoHS: Compliant Min Qty: 1 Package Multiple: 4800 48000
  • 4,800 $1.6700
  • 48,000 $1.5600
$1.5600 / $1.6700 Buy Now
Sense Electronic Company Limited QFN 4770
RFQ

Part Details for IRF6646TRPBF

IRF6646TRPBF CAD Models

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IRF6646TRPBF Part Data Attributes

Parametric Data
IRF6646TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF6646TRPBF Infineon Technologies AG Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 89 W
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6646TRPBF

This table gives cross-reference parts and alternative options found for IRF6646TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6646TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF6646TR1PBF Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6646TRPBF vs IRF6646TR1PBF
IRF6646TR1 Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-2 International Rectifier IRF6646TRPBF vs IRF6646TR1
IRF6646PBF Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 Infineon Technologies AG IRF6646TRPBF vs IRF6646PBF
IRF6646TRPBF Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6646TRPBF vs IRF6646TRPBF
IRF6646PBF Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6646TRPBF vs IRF6646PBF
Part Number Description Manufacturer Compare
IRF6646 Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-2 International Rectifier IRF6646TRPBF vs IRF6646
IRF6646PBF Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6646TRPBF vs IRF6646PBF
IRF6646TR1 Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-2 International Rectifier IRF6646TRPBF vs IRF6646TR1
IRF6646PBF Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 Infineon Technologies AG IRF6646TRPBF vs IRF6646PBF
IRF6646TR1PBF Power Field-Effect Transistor, 12A I(D), 80V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 International Rectifier IRF6646TRPBF vs IRF6646TR1PBF

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