Datasheets
IRF6645TRPBF by:

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Part Details for IRF6645TRPBF by International Rectifier

Overview of IRF6645TRPBF by International Rectifier

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Price & Stock for IRF6645TRPBF

Part # Distributor Description Stock Price Buy
Rochester Electronics IRF6645 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 196
  • 1 $0.7028
  • 25 $0.6887
  • 100 $0.6606
  • 500 $0.6325
  • 1,000 $0.5974
$0.5974 / $0.7028 Buy Now

Part Details for IRF6645TRPBF

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IRF6645TRPBF Part Data Attributes

IRF6645TRPBF International Rectifier
Buy Now Datasheet
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IRF6645TRPBF International Rectifier Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 29 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.7 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN SILVER COPPER
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6645TRPBF

This table gives cross-reference parts and alternative options found for IRF6645TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6645TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF6645TRPBF Infineon Technologies AG $0.7350 Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 IRF6645TRPBF vs IRF6645TRPBF
IRF6645PBF International Rectifier Check for Price Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 IRF6645TRPBF vs IRF6645PBF
IRF6645TR1 International Rectifier Check for Price Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 IRF6645TRPBF vs IRF6645TR1
IRF6645PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 IRF6645TRPBF vs IRF6645PBF
IRF6645TR1PBF International Rectifier Check for Price Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 IRF6645TRPBF vs IRF6645TR1PBF

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