Part Details for IRF6645TRPBF by International Rectifier
Overview of IRF6645TRPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF6645TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRF6645 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 196 |
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$0.5974 / $0.7028 | Buy Now |
Part Details for IRF6645TRPBF
IRF6645TRPBF CAD Models
IRF6645TRPBF Part Data Attributes
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IRF6645TRPBF
International Rectifier
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Datasheet
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IRF6645TRPBF
International Rectifier
Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 29 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 5.7 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 45 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF6645TRPBF
This table gives cross-reference parts and alternative options found for IRF6645TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6645TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRF6645TRPBF | Infineon Technologies AG | $0.7350 | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | IRF6645TRPBF vs IRF6645TRPBF |
IRF6645PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | IRF6645TRPBF vs IRF6645PBF |
IRF6645TR1 | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | IRF6645TRPBF vs IRF6645TR1 |
IRF6645PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | IRF6645TRPBF vs IRF6645PBF |
IRF6645TR1PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | IRF6645TRPBF vs IRF6645TR1PBF |