Part Details for IRF6637TRPBF by Infineon Technologies AG
Overview of IRF6637TRPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRF6637TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF6637TRPBF-448-ND
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DigiKey | IRF6637 - 12V-300V N-CHANNEL POW Min Qty: 332 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1872 In Stock |
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$0.9000 | Buy Now |
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DISTI #
IRF6637TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 14A 7-Pin Direct-FET MP T/R - Tape and Reel (Alt: IRF6637TRPBF) RoHS: Compliant Min Qty: 400 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 23135 Partner Stock |
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$0.7954 / $0.8956 | Buy Now |
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Rochester Electronics | IRF6637 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 404 |
|
$0.7764 / $0.9134 | Buy Now |
Part Details for IRF6637TRPBF
IRF6637TRPBF CAD Models
IRF6637TRPBF Part Data Attributes
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IRF6637TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRF6637TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 14A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 31 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.0077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |