Part Details for IRF6629PBF by Infineon Technologies AG
Overview of IRF6629PBF by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF6629PBF
IRF6629PBF CAD Models
IRF6629PBF Part Data Attributes
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IRF6629PBF
Infineon Technologies AG
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Datasheet
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IRF6629PBF
Infineon Technologies AG
Power Field-Effect Transistor, 29A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CHIP CARRIER, R-XBCC-N3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Avalanche Energy Rating (Eas) | 1170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 29 A | |
Drain-source On Resistance-Max | 0.0021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Pulsed Drain Current-Max (IDM) | 230 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF6629PBF
This table gives cross-reference parts and alternative options found for IRF6629PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6629PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF6629TRPBF | Power Field-Effect Transistor, 29A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6629PBF vs IRF6629TRPBF |
IRF6629TRPBF | Power Field-Effect Transistor, 29A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6629PBF vs IRF6629TRPBF |
IRF6629PBF | Power Field-Effect Transistor, 29A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6629PBF vs IRF6629PBF |